P-channel enhancement mode vertical DMOS transistor in a SOT23 (TO-236AB) plastic surface-mounted package, rated for a drain-source voltage of 50 V, continuous drain current of 130 mA at 25°C, and total power dissipation of 250 mW. It features a low threshold voltage of 0.8 V to 2 V, enabling direct interface with CMOS and TTL logic, and offers high-speed switching with turn-on and turn-off times of 3 ns and 7 ns respectively. The device meets AEC-Q200 qualification standards for automotive applications and is halogen-free in the BSS84/DG variant.
Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
Applications
P-Channel 50V 130mA (Ta) 250mW (Tc) Surface Mount TO-236AB
P-Channel 50V 130mA (Ta) 250mW (Tc) Surface Mount TO-236AB
P-Channel 50V 130mA (Ta) 250mW (Tc) Surface Mount TO-236AB
P-Channel JFET, D-MOS, Logic Level, TO-236 3-Pin Product overview: BSS84,215 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSS84,215 can be used for catalog matching and distributor lookup.
MOSFET P-CH 50V 130MA TO236AB
MOSFET P-CH 50V 130MA TO236AB
MOSFET, P-CH, -50V, -0.13A, TO-236AB; Channel Type:P Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:130mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET, P-CH, -50V, -0.13A, TO-236AB; Channel Type:P Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:130mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
50V 130mA 10Ω@130mA,10V 250mW 2V@1mA P Channel SOT-23-3 MOSFETs ROHS
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS84,215 | 1727-BSS84,215DKR-ND | 278-BSS84,215 | BSS84,215 | BSS84,215 | 11N8504 | BSS84,215 |
| Product Name | P-channel vertical D-MOS logic level FET | Single FETs, MOSFETs | P-Channel MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -50V, -0.13A, To-236Ab; Channel Type Nexperia | Triode/MOS Tube/Transistor >> MOSFETs |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | SOT23 | ||
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| TJ | -65 C (-85 F) | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) | ||||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
