N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 1A (Ta) 330mW (Ta), 2.1W (Tc) Surface Mount TO-236AB
N-Channel 30V 1A (Ta) 330mW (Ta), 2.1W (Tc) Surface Mount TO-236AB
N-Channel 30V 1A (Ta) 330mW (Ta), 2.1W (Tc) Surface Mount TO-236AB
MOSFET, 30V, 1A, 150DEG C, 0.48W ROHS COMPLIANT: YES
BSH103BK - 30 V, N-CHANNEL TRENC
BSH103BK - 30 V, N-CHANNEL TRENC
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSH103BKR | 1727-BSH103BKRDKR-ND | 32AJ0260 | BSH103BKR | BSH103BKR |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, 30V, 1A, 150Deg C, 0.48W Rohs Compliant Nexperia | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 30 volts | 30 volts | |||
| IDSS | 1000 milliamps | 1000 milliamps | |||
| VGS(off) | 12 volts | ||||
| PD | 330 milliwatts | 330 milliwatts |
