Nexperia B.V. 30 V, N-channel Trench MOSFET BSH103BKR

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - BSH103BKR - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-BSH103BKRDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BSH103BKRCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BSH103BKRTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSH103BKR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single FETs, MOSFETs - BSH103BKR - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, 30V, 1A, 150Deg C, 0.48W Rohs Compliant Nexperia - 32AJ0260 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - BSH103BKR - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
BSH103BKR
30 V, N-channel Trench MOSFET BSH103BKR
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BSH103BKRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSH103BKRDKR-ND
Single FETs, MOSFETs 1727-BSH103BKRDKR-ND
N-Channel 30V 1A (Ta) 330mW (Ta), 2.1W (Tc) Surface Mount TO-236AB

N-Channel 30V 1A (Ta) 330mW (Ta), 2.1W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BSH103BKRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSH103BKRCT-ND
Single FETs, MOSFETs 1727-BSH103BKRCT-ND
N-Channel 30V 1A (Ta) 330mW (Ta), 2.1W (Tc) Surface Mount TO-236AB

N-Channel 30V 1A (Ta) 330mW (Ta), 2.1W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BSH103BKRTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSH103BKRTR-ND
Single FETs, MOSFETs 1727-BSH103BKRTR-ND
N-Channel 30V 1A (Ta) 330mW (Ta), 2.1W (Tc) Surface Mount TO-236AB

N-Channel 30V 1A (Ta) 330mW (Ta), 2.1W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSH103BKR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSH103BKR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSH103BKR
BSH103BK - 30 V, N-CHANNEL TRENC

BSH103BK - 30 V, N-CHANNEL TRENC

Supplier's Site
Single FETs, MOSFETs - BSH103BKR - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BSH103BKR
Single FETs, MOSFETs BSH103BKR
BSH103BK - 30 V, N-CHANNEL TRENC

BSH103BK - 30 V, N-CHANNEL TRENC

Supplier's Site Datasheet
Mosfet, 30V, 1A, 150Deg C, 0.48W Rohs Compliant Nexperia - 32AJ0260 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, 30V, 1A, 150Deg C, 0.48W Rohs Compliant Nexperia
32AJ0260
Mosfet, 30V, 1A, 150Deg C, 0.48W Rohs Compliant Nexperia 32AJ0260
MOSFET, 30V, 1A, 150DEG C, 0.48W ROHS COMPLIANT: YES

MOSFET, 30V, 1A, 150DEG C, 0.48W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSH103BKR 1727-BSH103BKRDKR-ND BSH103BKR BSH103BKR 32AJ0260
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs Mosfet, 30V, 1A, 150Deg C, 0.48W Rohs Compliant Nexperia
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts 30 volts
IDSS 1000 milliamps 1000 milliamps
VGS(off) 12 volts
PD 330 milliwatts 330 milliwatts
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