Nexperia B.V. Single FETs, MOSFETs BUK7510-100B,127

Description
N-Channel 100V 75A (Tc) 300W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 100V 75A (Tc) 300W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

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Single FETs, MOSFETs - 568-6620-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
568-6620-5-ND
Single FETs, MOSFETs 568-6620-5-ND
N-Channel 100V 75A (Tc) 300W (Tc) Through Hole TO-220AB

N-Channel 100V 75A (Tc) 300W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7510-100B,127 - 1025213-BUK7510-100B,127 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7510-100B,127
1025213-BUK7510-100B,127
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7510-100B,127 1025213-BUK7510-100B,127
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1025213-BUK7510-100B ,127 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 6773pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): IXTP130N10T; IPP08CN10N GXK; IPP08CN10N; BUK7510-100B,127; Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1025213-BUK7510-100B,127
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 6773pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): IXTP130N10T; IPP08CN10N GXK; IPP08CN10N; BUK7510-100B,127;
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 568-6620-5-ND 1025213-BUK7510-100B,127
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7510-100B,127
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB
Transistor Grade / Operating Range Automotive
V(BR)DSS 100 volts
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