Nexperia B.V. 60 V, dual N-channel Trench MOSFET BSS138AKRA-QZ

Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 60 V, dual N-channel Trench MOSFET - BSS138AKRA-QZ - Nexperia B.V.
    Nexperia B.V.
  • FET, MOSFET Arrays - 1727-BSS138AKRA-QZCT-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-BSS138AKRA-QZTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-BSS138AKRA-QZDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, dual N-channel Trench MOSFET - BSS138AKRA-QZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
60 V, dual N-channel Trench MOSFET
BSS138AKRA-QZ
60 V, dual N-channel Trench MOSFET BSS138AKRA-QZ
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-BSS138AKRA-QZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-BSS138AKRA-QZCT-ND
FET, MOSFET Arrays 1727-BSS138AKRA-QZCT-ND
MOSFET 2N-CH 60V 0.32A 6DFN

MOSFET 2N-CH 60V 0.32A 6DFN

Buy Now Datasheet
FET, MOSFET Arrays - 1727-BSS138AKRA-QZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-BSS138AKRA-QZTR-ND
FET, MOSFET Arrays 1727-BSS138AKRA-QZTR-ND
MOSFET 2N-CH 60V 0.32A 6DFN

MOSFET 2N-CH 60V 0.32A 6DFN

Buy Now Datasheet
FET, MOSFET Arrays - 1727-BSS138AKRA-QZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-BSS138AKRA-QZDKR-ND
FET, MOSFET Arrays 1727-BSS138AKRA-QZDKR-ND
MOSFET 2N-CH 60V 0.32A 6DFN

MOSFET 2N-CH 60V 0.32A 6DFN

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number BSS138AKRA-QZ 1727-BSS138AKRA-QZCT-ND
Product Name 60 V, dual N-channel Trench MOSFET FET, MOSFET Arrays
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
IDSS 320000 milliamps
VGS(off) 20 volts
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