Nexperia B.V. 60 V, N-channel Trench MOSFET BSS138AKW-QX

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) surface-mounted plastic package measuring 2 mm x 1.25 mm x 0.95 mm, using Trench MOSFET technology. It has a drain-source voltage rating of 60 V, a continuous drain current of 220 mA at 25 °C, and a drain-source on-state resistance of 2.2 Ω at 10 V gate-source voltage and 100 mA drain current. The device is qualified to AEC-Q101, supports an operating junction temperature up to 175 °C, and includes ESD protection with an HBM rating of 500 V.