P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm, using Trench MOSFET technology. The device has a drain-source voltage rating of -80 V, a continuous drain current of -6 A at 25 °C, and a total power dissipation of 17 W. It features an extended junction temperature range up to 175 °C, side wettable flanks for optical solder inspection, and is AEC-Q101 qualified.
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
BUK6D215-80P/SOT1220
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | BUK6D215-80PX | 1727-BUK6D215-80PXTR-ND |
| Product Name | 80 V, P-channel Trench MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | -80 volts | |
| IDSS | -6000 milliamps | |
| VGS(off) | 20 volts | |
| PD | 17 milliwatts |
