Nexperia B.V. N-channel TrenchMOS intermediate level FET BST82,235

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits

• Saves PCB space due to small footprint
• Suitable for high frequency applications due to fast switching characteristics
• Suitable for logic level gate drive sources

Applications

• High-speed line drivers
• Logic level translators
• Relay drivers

MOSFET N-CH 100V 190MA TO236AB

N-Channel 100V 190mA (Ta) 830mW (Tc) Surface Mount TO-236AB

MOSFET N-CH 100V 190MA TO236AB

BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin Product overview: BST82,235 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BST82,235 can be used for catalog matching and distributor lookup.