N-channel enhancement mode field-effect transistor using TrenchMOS technology in a SOT23 surface-mount package, rated for a drain-source voltage of 100 V and a continuous drain current of 190 mA at 25°C, with a maximum power dissipation of 0.83 W and a junction temperature up to 150°C. The device has a drain-source on-state resistance of 5 to 10 Ω at VGS = 5 V and ID = 150 mA, and features fast switching characteristics suitable for relay drivers, high-speed line drivers, and logic level translation.
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
Applications
MOSFET N-CH 100V 190MA TO236AB
MOSFET N-CH 100V 190MA TO236AB
N-Channel 100V 190mA (Ta) 830mW (Tc) Surface Mount TO-236AB
BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin Product overview: BST82,235 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BST82,235 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 190MA TO236AB
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BST82,235 | 1727-BST82,235DKR-ND | 278-BST82,235 | BST82,235 |
| Product Name | N-channel TrenchMOS intermediate level FET | Single FETs, MOSFETs | N-Channel MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 |
