Nexperia B.V. 50 V, P-channel Trench MOSFET BSS84AKQBZ

Description
P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Side wettable flanks for optical solder inspection Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
  • 50 V, P-channel Trench MOSFET - BSS84AKQBZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-BSS84AKQBZTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BSS84AKQBZCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BSS84AKQBZDKR-ND - DigiKey
    DigiKey
  • Mosfet, P-Ch, 50V, 0.27A, Dfn1110D Rohs Compliant Nexperia - 62AJ8042 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSS84AKQBZ - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Side wettable flanks for optical solder inspection Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
50 V, P-channel Trench MOSFET - BSS84AKQBZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
50 V, P-channel Trench MOSFET
BSS84AKQBZ
50 V, P-channel Trench MOSFET BSS84AKQBZ
P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Side wettable flanks for optical solder inspection Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Side wettable flanks for optical solder inspection
  • Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BSS84AKQBZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSS84AKQBZTR-ND
Single FETs, MOSFETs 1727-BSS84AKQBZTR-ND
P-Channel 50V 270mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

P-Channel 50V 270mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BSS84AKQBZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSS84AKQBZCT-ND
Single FETs, MOSFETs 1727-BSS84AKQBZCT-ND
P-Channel 50V 270mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

P-Channel 50V 270mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BSS84AKQBZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSS84AKQBZDKR-ND
Single FETs, MOSFETs 1727-BSS84AKQBZDKR-ND
P-Channel 50V 270mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

P-Channel 50V 270mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3

Buy Now Datasheet
Mosfet, P-Ch, 50V, 0.27A, Dfn1110D Rohs Compliant Nexperia - 62AJ8042 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 50V, 0.27A, Dfn1110D Rohs Compliant Nexperia
62AJ8042
Mosfet, P-Ch, 50V, 0.27A, Dfn1110D Rohs Compliant Nexperia 62AJ8042
MOSFET, P-CH, 50V, 0.27A, DFN1110D ROHS COMPLIANT: YES

MOSFET, P-CH, 50V, 0.27A, DFN1110D ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSS84AKQBZ - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSS84AKQBZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSS84AKQBZ
BSS84AKQB/SOT8015/DF N1110D-3

BSS84AKQB/SOT8015/DFN1110D-3

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSS84AKQBZ 1727-BSS84AKQBZTR-ND 62AJ8042 BSS84AKQBZ
Product Name 50 V, P-channel Trench MOSFET Single FETs, MOSFETs Mosfet, P-Ch, 50V, 0.27A, Dfn1110D Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -50 volts
IDSS -270 milliamps
VGS(off) -1.6 volts
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