P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package measuring 1.1 x 1 x 0.48 mm, using Trench MOSFET technology. The device is logic-level compatible, features side wettable flanks for optical solder inspection, provides ESD protection exceeding 1 kV HBM (Class H1C), and is AEC-Q101 qualified. It has a drain-source voltage rating of -50 V, a continuous drain current of -270 mA at -10 V gate-source voltage and 25 °C, and a drain-source on-state resistance of up to 7.5 Ω at -10 V gate-source voltage and -100 mA drain current.
P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 50V 270mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3
P-Channel 50V 270mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3
P-Channel 50V 270mA (Ta) 420mW (Ta), 4.2W (Tc) Surface Mount, Wettable Flank DFN1110D-3
MOSFET, P-CH, 50V, 0.27A, DFN1110D ROHS COMPLIANT: YES
BSS84AKQB/SOT8015/DF
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSS84AKQBZ | 1727-BSS84AKQBZCT-ND | 62AJ8042 | BSS84AKQBZ |
| Product Name | 50 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, P-Ch, 50V, 0.27A, Dfn1110D Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | -50 volts | |||
| IDSS | -270000 milliamps | |||
| VGS(off) | 12 volts | |||
| PD | 420 milliwatts |
