Nexperia B.V. 20 V, P-channel Trench MOSFET BSH205G2VL

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power dissipation capability of 890 mW AEC-Q101 qualified Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
  • 20 V, P-channel Trench MOSFET - BSH205G2VL - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-BSH205G2VLCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BSH205G2VLDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BSH205G2VLTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSH205G2VL - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power dissipation capability of 890 mW AEC-Q101 qualified Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - BSH205G2VL - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
BSH205G2VL
20 V, P-channel Trench MOSFET BSH205G2VL
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power dissipation capability of 890 mW AEC-Q101 qualified Applications Relay driver High-speed line driver High-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Low on-state resistance
  • Trench MOSFET technology
  • Enhanced power dissipation capability of 890 mW
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BSH205G2VLCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSH205G2VLCT-ND
Single FETs, MOSFETs 1727-BSH205G2VLCT-ND
MOSFET P-CH 20V 2.3A TO236AB

MOSFET P-CH 20V 2.3A TO236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BSH205G2VLDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSH205G2VLDKR-ND
Single FETs, MOSFETs 1727-BSH205G2VLDKR-ND
MOSFET P-CH 20V 2.3A TO236AB

MOSFET P-CH 20V 2.3A TO236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BSH205G2VLTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSH205G2VLTR-ND
Single FETs, MOSFETs 1727-BSH205G2VLTR-ND
P-Channel 20V 2.3A (Ta) 480mW (Ta) Surface Mount TO-236AB

P-Channel 20V 2.3A (Ta) 480mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSH205G2VL - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSH205G2VL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSH205G2VL
MOSFET P-CH 20V 2.3A TO236AB

MOSFET P-CH 20V 2.3A TO236AB

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
BSH205G2VL
MOSFET BSH205G2VL
MOSFET BSH205G2/TO-236AB/RE EL 11" Q3/

MOSFET BSH205G2/TO-236AB/REEL 11" Q3/

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSH205G2VL 1727-BSH205G2VLCT-ND BSH205G2VL BSH205G2VL
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -2300 milliamps
VGS(off) 8 volts
PD 480 milliwatts
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