N-channel enhancement mode Trench MOSFET in a DFN2020MD-6 (SOT1220) surface-mount package measuring 2 mm x 2 mm x 0.65 mm, designed for DC-DC conversion, high-speed line driving, and switching applications. It features a maximum drain-source voltage of 30 V, continuous drain current of 8.3 A at 25 ⁰C, and a drain-source on-state resistance of 48 to 60 mΩ at 4.5 V gate drive. The device supports a junction temperature up to 175 ⁰C, includes side wettable flanks for optical inspection, offers ESD protection exceeding 1 kV HBM, and is AEC-Q101 qualified.
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK4D60-30H |
| Product Name | 30 V, N-channel Trench MOSFET |
| MOSFET Operating Mode | Enhancement |
| V(BR)DSS | 30 volts |
| IDSS | 8300 milliamps |
| VGS(off) | 12 volts |
