Nexperia B.V. 80 V, P-channel Trench MOSFET BUK6Y55-80PX

Description
P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits High thermal power dissipation capability Suitable for thermally demanding environments due to 175 °C rating Trench MOSFET technology AEC-Q101 qualified Applications Reverse battery protection Power management High-side load switch Motor drive
  • 80 V, P-channel Trench MOSFET - BUK6Y55-80PX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-BUK6Y55-80PXTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK6Y55-80PXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK6Y55-80PXDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits High thermal power dissipation capability Suitable for thermally demanding environments due to 175 °C rating Trench MOSFET technology AEC-Q101 qualified Applications Reverse battery protection Power management High-side load switch Motor drive
Request a Quote Datasheet

Suppliers

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Product
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Supplier Links
80 V, P-channel Trench MOSFET - BUK6Y55-80PX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
80 V, P-channel Trench MOSFET
BUK6Y55-80PX
80 V, P-channel Trench MOSFET BUK6Y55-80PX
P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits High thermal power dissipation capability Suitable for thermally demanding environments due to 175 °C rating Trench MOSFET technology AEC-Q101 qualified Applications Reverse battery protection Power management High-side load switch Motor drive

P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Features and benefits

  • High thermal power dissipation capability
  • Suitable for thermally demanding environments due to 175 °C rating
  • Trench MOSFET technology
  • AEC-Q101 qualified

Applications

  • Reverse battery protection
  • Power management
  • High-side load switch
  • Motor drive
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BUK6Y55-80PXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK6Y55-80PXTR-ND
Single FETs, MOSFETs 1727-BUK6Y55-80PXTR-ND
BUK6Y55-80P/SOT669/L FPAK

BUK6Y55-80P/SOT669/LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK6Y55-80PXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK6Y55-80PXCT-ND
Single FETs, MOSFETs 1727-BUK6Y55-80PXCT-ND
BUK6Y55-80P/SOT669/L FPAK

BUK6Y55-80P/SOT669/LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK6Y55-80PXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK6Y55-80PXDKR-ND
Single FETs, MOSFETs 1727-BUK6Y55-80PXDKR-ND
BUK6Y55-80P/SOT669/L FPAK

BUK6Y55-80P/SOT669/LFPAK

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number BUK6Y55-80PX 1727-BUK6Y55-80PXTR-ND
Product Name 80 V, P-channel Trench MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS -80 volts
IDSS -35000 milliamps
VGS(off) 20 volts
PD 150 milliwatts
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