N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 surface-mounted plastic package measuring 2.9 mm x 1.3 mm x 1 mm, using Trench MOSFET technology. The device has a drain-source voltage rating of 60 V, a gate-source voltage range of ±20 V, and a continuous drain current of 250 mA at 25 °C. It features logic-level compatibility, electrostatic discharge protection, and is AEC-Q101 qualified with an extended junction temperature range up to 175 °C. Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | BSS138AK-QR | 1727-BSS138AK-QRDKR-ND |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 60 volts | |
| IDSS | 250000 milliamps | |
| VGS(off) | 20 volts | |
| PD | 320 milliwatts |
