Nexperia B.V. 20 V, P-channel Trench MOSFET BUK4D38-20PH

P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package, measuring 2 mm × 2 mm × 0.65 mm, using Trench MOSFET technology. It features an extended junction temperature range up to 175 °C, side wettable flanks for optical solder inspection, ESD protection exceeding 1 kV HBM (class H1C), and is AEC-Q101 qualified. The device has a drain-source voltage rating of -20 V, a continuous drain current of -18 A at 25 °C, and a drain-source on-state resistance of 30 mΩ to 38 mΩ at V_{GS} = -4.5 V and I_D = -6 A. Total power dissipation is 19 W at 25 °C.