P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package, measuring 2 mm × 2 mm × 0.65 mm, using Trench MOSFET technology. It features an extended junction temperature range up to 175 °C, side wettable flanks for optical solder inspection, ESD protection exceeding 1 kV HBM (class H1C), and is AEC-Q101 qualified. The device has a drain-source voltage rating of -20 V, a continuous drain current of -18 A at 25 °C, and a drain-source on-state resistance of 30 mΩ to 38 mΩ at V_{GS} = -4.5 V and I_D = -6 A. Total power dissipation is 19 W at 25 °C.
P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
SMALL SIGNAL MOSFETS FOR AUTOMOT
SMALL SIGNAL MOSFETS FOR AUTOMOT
SMALL SIGNAL MOSFETS FOR AUTOMOT
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | BUK4D38-20PH | 1727-BUK4D38-20PHTR-ND |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | -20 volts | |
| IDSS | -18000 milliamps | |
| VGS(off) | 12 volts | |
| PD | 19 milliwatts |
