N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 60V 4A/11A 6DFN
N-Channel 60V 4A (Ta), 11A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6
N-Channel 60V 4A (Ta), 11A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6
N-Channel 60V 4A (Ta), 11A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6
MOSFET, N-CH, 60V, 11A, DFN2020MD-6; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET BUK6D56-60E/SOT1220/
MOSFET N-CH 60V 4A/11A 6DFN
| Nexperia B.V. | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BUK6D56-60EX | BUK6D56-60EX | 1727-8676-1-ND | 07AH3640 | BUK6D56-60EX | BUK6D56-60EX |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 11A, Dfn2020Md-6; Transistor Polarity Nexperia | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||
| Package Type | SOT1220 | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | TO-3 | 6-UDFN Exposed Pad | |
| Polarity | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts |
