N-channel enhancement mode MOS transistor in an SOT23 surface-mount package designed for battery-powered applications and high-speed digital interfacing. It has a drain-source voltage rating of 20 V, a continuous drain current of 1.05 A at 25 °C, and a very low threshold voltage of 0.4 V minimum. The device features fast switching and logic level compatibility with on-state resistance as low as 140 mΩ at Vₓ = 4.5 V and Iₓ = 0.6 A. It meets UL 94 V-0 for flammability and is specified for operating temperatures from -55 °C to 150 °C.
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
Applications
N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB
N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB
N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB
MOSFET N-Channel 20V 1.05A TO236AB
MOSFET N-Channel 20V 1.05A TO236AB
N-Channel JFET, Logic Level, 3-Pin, TO-236 Product overview: BSH105,215 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSH105,215 can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 1.05A TO236AB
MOSFET N-CH 20V 1.05A TO236AB
MOSFET, N-CH, 20V, 1.05A, 0.417W, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.05A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:570mV RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSH105,215 | 1727-BSH105,215CT-ND | 509273 | 278-BSH105,215 | BSH105,215 | BSH105,215 | 34R3007 |
| Product Name | N-channel vertical D-MOS logic level FET | Single FETs, MOSFETs | MOSFETs | N-Channel MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 20V, 1.05A, 0.417W, Sot-23; Channel Type Nexperia |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; Sot-23 (to-236ab) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| Number of units in IC | 1 | ||||||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
