N-channel enhancement mode MOSFET in a DFN2020MD-6 (SOT1220) surface-mount package measuring 2 mm x 2 mm x 0.65 mm, featuring side wettable flanks and Trench MOSFET technology. It operates with a drain-source voltage of 40 V and a maximum junction temperature of 175 °C, with a continuous drain current of 19 A at 25 °C and an on-state resistance of 16.8 mΩ at 10 V gate-source voltage. The device is AEC-Q101 qualified for automotive applications.
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
BUK6D20-40E/SOT1220/
BUK6D20-40E/SOT1220/
BUK6D20-40E/SOT1220/
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | BUK6D20-40EX | 1727-BUK6D20-40EXCT-ND |
| Product Name | 40 V, N-channel Trench MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 40 volts | |
| IDSS | 19000 milliamps | |
| VGS(off) | 20 volts | |
| PD | 15 milliwatts |