These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.
Summary of Features
Low inductance Ls = 1.4 nH (typical)
Low capacitance C = 0.61 pF (typical) at frequency f = 1 MHz
Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm)
Pb-free, RoHS compliant and halogen free
Potential Applications
For mixers and detectors in:
Wearables
Smart metering
Telematic systems
These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.
Summary of Features
- Low inductance Ls = 1.4 nH (typical)
- Low capacitance C = 0.61 pF (typical) at frequency f = 1 MHz
- Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm)
- Pb-free, RoHS compliant and halogen free
Potential Applications
For mixers and detectors in:
- Wearables
- Smart metering
- Telematic systems
