This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and very low resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end solutions.
Summary of Features
Low capacitance C = 0.31 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 GHz
Very low forward resistance RF = 1.9 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz
Charge carrier lifetime τ = 75 ns (typical)
Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm)
Pb-free, RoHS compliant and halogen-free
Potential Applications
Optimized for low bias current RF and high-speed interface switches in:
Wireless communications
High speed data networks
This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and very low resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end solutions.
Summary of Features
- Low capacitance C = 0.31 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 GHz
- Very low forward resistance RF = 1.9 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz
- Charge carrier lifetime τ = 75 ns (typical)
- Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm)
- Pb-free, RoHS compliant and halogen-free
Potential Applications
Optimized for low bias current RF and high-speed interface switches in:
- Wireless communications
- High speed data networks
