This Infineon cost optimized RF PIN diode is designed for high performance switches. Its shunt configuration results in reduces parasitic inductance and is mostly suited for high-speed switching applications.
Summary of Features
Optimized for short - open transformation using λ/4 transmission lines
Reduced impact of parasitic inductance due to design
High shunt signal isolation ISO = 27 dB (typical) at forward current IF = 1 mA and frequency f = 1 GHz
Low shunt insertion loss IL = 0.17 dB (typical) at voltage VR = 0 V and frequency f = 1 GHz
Charge carrier lifetime τ = 80 ns (typical)
Industry standard SOT343 package (2.0 mm xm 2.1 mm x 0.9 mm)
Pb-free, RoHS compliant and halogen-free
Potential Applications
Optimized for low bias current RF and high-speed interface switches in:
Wireless Communications
High Speed Data Networks
This Infineon cost optimized RF PIN diode is designed for high performance switches. Its shunt configuration results in reduces parasitic inductance and is mostly suited for high-speed switching applications.
Summary of Features
- Optimized for short - open transformation using λ/4 transmission lines
- Reduced impact of parasitic inductance due to design
- High shunt signal isolation ISO = 27 dB (typical) at forward current IF = 1 mA and frequency f = 1 GHz
- Low shunt insertion loss IL = 0.17 dB (typical) at voltage VR = 0 V and frequency f = 1 GHz
- Charge carrier lifetime τ = 80 ns (typical)
- Industry standard SOT343 package (2.0 mm xm 2.1 mm x 0.9 mm)
- Pb-free, RoHS compliant and halogen-free
Potential Applications
Optimized for low bias current RF and high-speed interface switches in:
- Wireless Communications
- High Speed Data Networks
