Infineon Technologies AG RF Mixer and Detector Schottky Diode BAT15-03W

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz. Summary of Features • Low inductance Ls = 1.8 nH (typical) • Low capacitance C = 0.28 pF (typical) at 1 MHz • Industry standard SOD323 package (1.7 mm x 1.25 mm x 0.9 mm) • Pb-free, RoHs compliant and halogen-free Potential Applications For mixers and detectors in: Sensor interface in and secury systems Telematic systems Compensators Radar systems for industrial use Applications Automotive telematics control unit (TCU)