This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Summary of Features
• Low inductance Ls = 1.8 nH (typical)
• Low capacitance C = 0.28 pF (typical) at 1 MHz
• Industry standard SOD323 package (1.7 mm x 1.25 mm x 0.9 mm)
• Pb-free, RoHs compliant and halogen-free
Potential Applications
For mixers and detectors in:
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | RF Diodes |
| Product Number | BAT15-03W |
| Product Name | RF Mixer and Detector Schottky Diode |
| Configuration | Single |
| Diode Type | Schottky |
| Diode Applications | Detector; Mixer |
| Life Cycle Stage | active and preferred |
| RoHS Compliant | RoHS |
