Infineon Technologies AG RF Mixer and Detector Schottky Diode BAT15-03W

Description
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz. Summary of Features • Low inductance Ls = 1.8 nH (typical) • Low capacitance C = 0.28 pF (typical) at 1 MHz • Industry standard SOD323 package (1.7 mm x 1.25 mm x 0.9 mm) • Pb-free, RoHs compliant and halogen-free Potential Applications For mixers and detectors in: Sensor interface in and secury systems Telematic systems Compensators Radar systems for industrial use Applications Automotive telematics control unit (TCU)
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Description
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz. Summary of Features • Low inductance Ls = 1.8 nH (typical) • Low capacitance C = 0.28 pF (typical) at 1 MHz • Industry standard SOD323 package (1.7 mm x 1.25 mm x 0.9 mm) • Pb-free, RoHs compliant and halogen-free Potential Applications For mixers and detectors in: Sensor interface in and secury systems Telematic systems Compensators Radar systems for industrial use Applications Automotive telematics control unit (TCU)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Mixer and Detector Schottky Diode - BAT15-03W - Infineon Technologies AG
Neubiberg, Germany
RF Mixer and Detector Schottky Diode
BAT15-03W
RF Mixer and Detector Schottky Diode BAT15-03W
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz. Summary of Features • Low inductance Ls = 1.8 nH (typical) • Low capacitance C = 0.28 pF (typical) at 1 MHz • Industry standard SOD323 package (1.7 mm x 1.25 mm x 0.9 mm) • Pb-free, RoHs compliant and halogen-free Potential Applications For mixers and detectors in: Sensor interface in and secury systems Telematic systems Compensators Radar systems for industrial use Applications Automotive telematics control unit (TCU)

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.


Summary of Features

• Low inductance Ls = 1.8 nH (typical)

• Low capacitance C = 0.28 pF (typical) at 1 MHz

• Industry standard SOD323 package (1.7 mm x 1.25 mm x 0.9 mm)

• Pb-free, RoHs compliant and halogen-free


Potential Applications

For mixers and detectors in:

  • Sensor interface in and secury systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use

Applications

  • Automotive telematics control unit (TCU)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Diodes
Product Number BAT15-03W
Product Name RF Mixer and Detector Schottky Diode
Configuration Single
Diode Type Schottky
Diode Applications Detector; Mixer
Life Cycle Stage active and preferred
RoHS Compliant RoHS
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