Infineon Technologies AG RF Mixer and Detector Schottky Diode BAT63-02V

Description
Silicon Schottky Diodes Summary of Features Low barrier diode for detectors up to GHz frequencies For high-speed applications Zero bias detector diode Pb-free (RoHS compliant) package Potential Applications Wireless Communications Satellite Receivers Base Stations High Speed Data Networks RFID Applications Cordless power tools and outdoor power equipment Smart speaker designs Designers who used this product also designed with IRF5210 | P-Channel Power MOSFET IPT012N08N5 | N-Channel Power MOSFET IRF5210 | P-Channel Power MOSFET IPT012N08N5 | N-Channel Power MOSFET IRF5210 | P-Channel Power MOSFET IPT012N08N5 | N-Channel Power MOSFET
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Description
Silicon Schottky Diodes Summary of Features Low barrier diode for detectors up to GHz frequencies For high-speed applications Zero bias detector diode Pb-free (RoHS compliant) package Potential Applications Wireless Communications Satellite Receivers Base Stations High Speed Data Networks RFID Applications Cordless power tools and outdoor power equipment Smart speaker designs Designers who used this product also designed with IRF5210 | P-Channel Power MOSFET IPT012N08N5 | N-Channel Power MOSFET IRF5210 | P-Channel Power MOSFET IPT012N08N5 | N-Channel Power MOSFET IRF5210 | P-Channel Power MOSFET IPT012N08N5 | N-Channel Power MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Mixer and Detector Schottky Diode - BAT63-02V - Infineon Technologies AG
Neubiberg, Germany
RF Mixer and Detector Schottky Diode
BAT63-02V
RF Mixer and Detector Schottky Diode BAT63-02V
Silicon Schottky Diodes Summary of Features Low barrier diode for detectors up to GHz frequencies For high-speed applications Zero bias detector diode Pb-free (RoHS compliant) package Potential Applications Wireless Communications Satellite Receivers Base Stations High Speed Data Networks RFID Applications Cordless power tools and outdoor power equipment Smart speaker designs Designers who used this product also designed with IRF5210 | P-Channel Power MOSFET IPT012N08N5 | N-Channel Power MOSFET IRF5210 | P-Channel Power MOSFET IPT012N08N5 | N-Channel Power MOSFET IRF5210 | P-Channel Power MOSFET IPT012N08N5 | N-Channel Power MOSFET

Silicon Schottky Diodes


Summary of Features

  • Low barrier diode for detectors up to GHz frequencies
  • For high-speed applications
  • Zero bias detector diode
  • Pb-free (RoHS compliant) package

Potential Applications

  • Wireless Communications
  • Satellite Receivers
  • Base Stations
  • High Speed Data Networks
  • RFID

Applications

  • Cordless power tools and outdoor power equipment
  • Smart speaker designs

Designers who used this product also designed with


  • IRF5210 |
    P-Channel Power MOSFET
  • IPT012N08N5 |
    N-Channel Power MOSFET
  • IRF5210 |
    P-Channel Power MOSFET
  • IPT012N08N5 |
    N-Channel Power MOSFET
  • IRF5210 |
    P-Channel Power MOSFET
  • IPT012N08N5 |
    N-Channel Power MOSFET
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Diodes
Product Number BAT63-02V
Product Name RF Mixer and Detector Schottky Diode
Configuration Single
Diode Type Schottky
Diode Applications Detector; Mixer
Life Cycle Stage active and preferred
RoHS Compliant RoHS
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