Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 12 GHz.
Summary of Features
• Low inductance LS = 0.2 nH (typical)
• Low capacitance C = 0.2 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz
• TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 footprint
• Pb-free (RoHS compliant) and halogen free
Potential Applications
For mixers and detectors in:
• LiDAR systems
• Radar systems
• Modules and embedded systems
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | RF Diodes |
| Product Number | BAT15-02LS |
| Product Name | RF Mixer and Detector Schottky Diode |
| Configuration | Single |
| Diode Type | Schottky |
| Diode Applications | Detector; Mixer |
| Life Cycle Stage | active and preferred, discontinued |
| RoHS Compliant | RoHS |
