Infineon Technologies AG RFFETs - BA 892-02V E6433 BA 892-02V E6433

The BA 892-02V E6433 is a silicon RF switching diode designed for band switching applications in TV/VTR tuners and mobile devices. It features a maximum reverse voltage of 35V and a forward current rating of 100mA, making it suitable for various RF applications. The diode exhibits a low forward resistance of approximately 0.45 ,Ѷ at 3 mA, which contributes to its efficiency in signal switching. This component is packaged in a Pb-free (RoHS compliant) SC-79 package and is qualified according to AEC Q101 standards, indicating its reliability for automotive applications. The operating temperature range is from -55¬8C to 125¬8C, with a maximum junction temperature of 150¬8C. The diode also has low capacitance values, with typical capacitance ranging from 0.6 pF to 1.4 pF at different reverse voltages and frequencies, which is beneficial for maintaining signal integrity in high-frequency applications. Overall, the BA 892-02V E6433 is a robust choice for engineers looking for a reliable RF switching diode with good thermal and electrical characteristics.