RS Components, Ltd. Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more

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Product Name Notes
-100V 1.0A Dual Pch+Pch MOSFET
100V 2.0A Dual Nch+Nch DFN2020-8D MOSFET
100V 2.0A/1.0A Dual Nch+Pch Power MOSFET
7 Darlington Array NPN 50V 500mA PDIP16
7-Ch Relay, Inductive Sink Driver SOIC16
Darlington Array x7 NPN 50V 0.5A PDIP16
Darlington Array x7 NPN 50V 0.5A SO16
Darlington Array x7 NPN 50V 0.5A SOIC16
Eight Darlington Array 500mA 50V DIP18
High Speed IGBT INT-A-PAK, 100 A
High Speed IGBT INT-A-PAK, 200 A
High voltage converter
IGBT Module 1200V 100A SOT-227
IGBT Module 1200V 106A SOT-227
IGBT Module 1200V 180A SOT-227
IGBT Module 1200V 47A SOT-227
IGBT Module 1200V 80A SOT-227
IGBT Module 600V 250A SOT-227
IGBT Module 600V 70A SOT-227
IGBT Module 600V 93A SOT-227
IGBT Module 650V 100A SOT-227
IGBT Module 650V 50A SOT-227
Low VCE(on) IGBT INT-A-PAK, 100 A
Low VCE(on) IGBT INT-A-PAK, 150 A
Low VCE(on) IGBT INT-A-PAK, 200 A
Microchip VP2206N3-G MOSFET
MOSFET N-CH 0.23A 60V 3-Pin TO-92
MOSFET P-CH 0.25A -60V 3-Pin TO-92
MOSFET Trans N-Ch 19A 240V 3-Pin TO-92
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 30V,
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V,
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V,
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -100
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -500
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -90V
MOSFET, P-CHANNEL ENHANCEMENT-MODE
NPN SOT-323 Power Transistor
PNP+PNP Digital transistor
Quad Darlington Sw. NPN 50V 1.75A PDIP16
Quad Darlington Sw. NPN 80V 1.75A PDIP16
Trans Darlington NPN 50V 0.5A TSSOP16
Trans Darlington, ULN2003APWR
Transistor Dual PNP 150mA 0.15W SOIC6
ULN2004ADR, Trans Darlington NPN

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