P-Channel 40V 250mA (Tj) 1W (Tc) Through Hole TO-92-3
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V
Manufacturer: Microchip Technology
Win Source Part Number: 213880-VP0104N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 250mA (Tj)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
MOSFET P-CH 40V 250MA TO92-3 Product overview: VP0104N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 250MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 250MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VP0104N3-G can be used for catalog matching and distributor lookup.
MOSFET, P-CH, 40V, 0.25A, 150DEG C, 1W; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:250mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
MOSFET P-CH 40V 250MA TO92-3
| DigiKey | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VP0104N3-G-ND | 2648948 | 213880-VP0104N3-G | 278-VP0104N3-G | 53Y4342 | VP0104N3-G | VP0104N3-G |
| Product Name | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0104N3-G | 40V 250MA MOSFET Transistor | Mosfet, P-Ch, 40V, 0.25A, 150Deg C, 1W; Channel Type Microchip | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-92; TO-92 | TO-92; SOT3; TO-92-3 | Bag | TO-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| PD | 1000 milliwatts | 1 milliwatts |
