Microchip Technology, Inc. Single FETs, MOSFETs VP0104N3-G

Description
P-Channel 40V 250mA (Tj) 1W (Tc) Through Hole TO-92-3
Request a Quote Datasheet
Description
P-Channel 40V 250mA (Tj) 1W (Tc) Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - VP0104N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP0104N3-G-ND
Single FETs, MOSFETs VP0104N3-G-ND
P-Channel 40V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

P-Channel 40V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
MOSFETs - 2648948 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2648948
MOSFETs 2648948
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V

Supplier's Site
MOSFETs - 2648949P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2648949P
MOSFETs 2648949P
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V

Supplier's Site
MOSFETs - 2648949 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2648949
MOSFETs 2648949
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0104N3-G - 213880-VP0104N3-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0104N3-G
213880-VP0104N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0104N3-G 213880-VP0104N3-G
Manufacturer: Microchip Technology Win Source Part Number: 213880-VP0104N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 250mA (Tj) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Microchip Technology
Win Source Part Number: 213880-VP0104N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 250mA (Tj)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VP0104N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VP0104N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VP0104N3-G
MOSFET P-CH 40V 250MA TO92-3

MOSFET P-CH 40V 250MA TO92-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 40V 8Ohm

MOSFET 40V 8Ohm

Buy Now Datasheet
Mosfet, P-Ch, 40V, 0.25A, 150Deg C, 1W; Channel Type Microchip - 53Y4342 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 40V, 0.25A, 150Deg C, 1W; Channel Type Microchip
53Y4342
Mosfet, P-Ch, 40V, 0.25A, 150Deg C, 1W; Channel Type Microchip 53Y4342
MOSFET, P-CH, 40V, 0.25A, 150DEG C, 1W; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:250mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

MOSFET, P-CH, 40V, 0.25A, 150DEG C, 1W; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:250mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey RS Components, Ltd. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number VP0104N3-G-ND 2648948 213880-VP0104N3-G VP0104N3-G VP0104N3-G 53Y4342
Product Name Single FETs, MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0104N3-G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, P-Ch, 40V, 0.25A, 150Deg C, 1W; Channel Type Microchip
Polarity P-Channel P-Channel P-Channel; P-Channel
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; TO-92 TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-3
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
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