The VN2406 is an N-Channel Enhancement-Mode Vertical DMOS FET with a maximum drain-to-source voltage of 240V and a continuous drain current rating of 190mA. It features a low on-state resistance of 6.0Oc at a gate-source voltage of 10V, making it suitable for applications requiring efficient power handling. The device operates within a temperature range of -55¬8C to +150¬8C and has a power dissipation capability of 1W. It is designed for low power drive requirements and offers fast switching speeds, making it ideal for motor controls, converters, amplifiers, and various switching applications. The VN2406 is RoHS compliant and comes in a TO-92 package.
Manufacturer: Microchip Technology
Win Source Part Number: 1117328-VN2406L-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 240V
Continuous Drain Current at 25°C: 190mA (Tj)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 125pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V
N-Channel 240V 190mA (Tj) 1W (Tc) Through Hole TO-92-3
MOSFET N-CH 240V 190MA TO92-3
MOSFET, 240V, 0.19A, 150DEG C, 1W; Transistor Polarity:N Channel; Continuous Drain Current Id:190mA; Drain Source Voltage Vds:240V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 240V 190MA TO92-3
| Win Source Electronics | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1117328-VN2406L-G | 2648945P | VN2406L-G-ND | VN2406L-G | 72AC6919 | VN2406L-G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN2406L-G | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, 240V, 0.19A, 150Deg C, 1W; Transistor Polarity Microchip | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 240 volts | 240 volts | ||||
| PD | 1000 milliwatts | 1000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-92; SOT3; TO-92-3 | TO-92; TO-92 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) |
