Microchip Technology, Inc. MOSFETs VP0109N3-G

Description
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -90V
  • MOSFETs - 2368964 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - VP0109N3-G-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0109N3-G - 1117584-VP0109N3-G - Win Source Electronics
    Win Source Electronics
  • Mosfet, P-Ch, -0.25A, -90V, To-92-3; Transistor Polarity Microchip - 44AC3397 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VP0109N3-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -90V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 2368964 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2368964
MOSFETs 2368964
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -90V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -90V

Supplier's Site
Single FETs, MOSFETs - VP0109N3-G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP0109N3-G-ND
Single FETs, MOSFETs VP0109N3-G-ND
P-Channel 90V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

P-Channel 90V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0109N3-G - 1117584-VP0109N3-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0109N3-G
1117584-VP0109N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0109N3-G 1117584-VP0109N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1117584-VP0109N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 90V Continuous Drain Current at 25°C: 250mA (Tj) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1117584-VP0109N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 90V
Continuous Drain Current at 25°C: 250mA (Tj)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
VP0109N3-G
MOSFET VP0109N3-G
MOSFET 90V 8Ohm

MOSFET 90V 8Ohm

Buy Now
Mosfet, P-Ch, -0.25A, -90V, To-92-3; Transistor Polarity Microchip - 44AC3397 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -0.25A, -90V, To-92-3; Transistor Polarity Microchip
44AC3397
Mosfet, P-Ch, -0.25A, -90V, To-92-3; Transistor Polarity Microchip 44AC3397
MOSFET, P-CH, -0.25A, -90V, TO-92-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-250mA; Drain Source Voltage Vds:-90V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Power RoHS Compliant: Yes

MOSFET, P-CH, -0.25A, -90V, TO-92-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-250mA; Drain Source Voltage Vds:-90V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VP0109N3-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VP0109N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VP0109N3-G
MOSFET P-CH 90V 250MA TO92-3

MOSFET P-CH 90V 250MA TO92-3

Supplier's Site

Technical Specifications

  RS Components, Ltd. DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2368964 VP0109N3-G-ND 1117584-VP0109N3-G VP0109N3-G 44AC3397 VP0109N3-G
Product Name MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0109N3-G MOSFET Mosfet, P-Ch, -0.25A, -90V, To-92-3; Transistor Polarity Microchip Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel
MOSFET Operating Mode Enhancement
Package Type TO-92; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3; TO-92-3 TO-3; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA)
V(BR)DSS 90 volts
PD 1000 milliwatts
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