Microchip Technology, Inc. Single FETs, MOSFETs VN0106N3-G

Description
N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-92-3
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Description
N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - VN0106N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VN0106N3-G-ND
Single FETs, MOSFETs VN0106N3-G-ND
N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-92-3

N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN0106N3-G - 1117312-VN0106N3-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN0106N3-G
1117312-VN0106N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN0106N3-G 1117312-VN0106N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1117312-VN0106N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 350mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 65pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1117312-VN0106N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 350mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 65pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 2648940 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2648940
MOSFETs 2648940
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V,

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V,

Supplier's Site
MOSFETs - 2648941 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2648941
MOSFETs 2648941
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V,

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V,

Supplier's Site
MOSFETs - 2648941P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2648941P
MOSFETs 2648941P
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V,

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V,

Supplier's Site
Single FETs, MOSFETs - VN0106N3-G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
VN0106N3-G
Single FETs, MOSFETs VN0106N3-G
MOSFET N-CH 60V 350MA TO92-3

MOSFET N-CH 60V 350MA TO92-3

Supplier's Site Datasheet
D-Mosfet, N-Ch, 0.35A, 60V, To-92-3; Transistor Polarity Microchip - 55AC4280 - Newark, An Avnet Company
Chicago, IL, United States
D-Mosfet, N-Ch, 0.35A, 60V, To-92-3; Transistor Polarity Microchip
55AC4280
D-Mosfet, N-Ch, 0.35A, 60V, To-92-3; Transistor Polarity Microchip 55AC4280
D-MOSFET, N-CH, 0.35A, 60V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes

D-MOSFET, N-CH, 0.35A, 60V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V 3Ohm

MOSFET 60V 3Ohm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VN0106N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VN0106N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VN0106N3-G
MOSFET N-CH 60V 350MA TO92-3

MOSFET N-CH 60V 350MA TO92-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics RS Components, Ltd. ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number VN0106N3-G-ND 1117312-VN0106N3-G 2648940 VN0106N3-G 55AC4280 VN0106N3-G VN0106N3-G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN0106N3-G MOSFETs Single FETs, MOSFETs D-Mosfet, N-Ch, 0.35A, 60V, To-92-3; Transistor Polarity Microchip MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3; TO-92-3 TO-92; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-3; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA)
V(BR)DSS 60 volts 60 volts
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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