Microchip Technology, Inc. MOSFETs VP0106N3-G

Description
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V
Request a Quote Datasheet
Description
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 2368961 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2368961
MOSFETs 2368961
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V

Supplier's Site
MOSFETs - 2368962P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2368962P
MOSFETs 2368962P
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V

Supplier's Site
MOSFETs - 2368962 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2368962
MOSFETs 2368962
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V

Supplier's Site
Single FETs, MOSFETs - VP0106N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP0106N3-G-ND
Single FETs, MOSFETs VP0106N3-G-ND
P-Channel 60V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

P-Channel 60V 250mA (Tj) 1W (Tc) Through Hole TO-92-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0106N3-G - 1117583-VP0106N3-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0106N3-G
1117583-VP0106N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0106N3-G 1117583-VP0106N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1117583-VP0106N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 250mA (Tj) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 60pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1117583-VP0106N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 250mA (Tj)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VP0106N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VP0106N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VP0106N3-G
MOSFET P-CH 60V 250MA TO92-3

MOSFET P-CH 60V 250MA TO92-3

Supplier's Site
Mosfet, P-Ch, -0.25A, -60V, To-92-3; Transistor Polarity Microchip - 44AC3396 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -0.25A, -60V, To-92-3; Transistor Polarity Microchip
44AC3396
Mosfet, P-Ch, -0.25A, -60V, To-92-3; Transistor Polarity Microchip 44AC3396
MOSFET, P-CH, -0.25A, -60V, TO-92-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-250mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Power RoHS Compliant: Yes

MOSFET, P-CH, -0.25A, -60V, TO-92-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-250mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V 8Ohm

MOSFET 60V 8Ohm

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Technical Specifications

  RS Components, Ltd. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2368961 VP0106N3-G-ND 1117583-VP0106N3-G VP0106N3-G 44AC3396 VP0106N3-G
Product Name MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0106N3-G Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -0.25A, -60V, To-92-3; Transistor Polarity Microchip MOSFET
Polarity P-Channel P-Channel P-Channel; P-Channel
MOSFET Operating Mode Enhancement
Package Type TO-92; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-3; TO-92
V(BR)DSS 60 volts
PD 1000 milliwatts
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