Manufacturer: Microchip Technology
Win Source Part Number: 1117583-VP0106N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 250mA (Tj)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V
P-Channel 60V 250mA (Tj) 1W (Tc) Through Hole TO-92-3
MOSFET, P-CH, -0.25A, -60V, TO-92-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-250mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Power RoHS Compliant: Yes
MOSFET P-CH 60V 250MA TO92-3
| Win Source Electronics | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1117583-VP0106N3-G | 2368961 | VP0106N3-G-ND | 44AC3396 | VP0106N3-G | VP0106N3-G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0106N3-G | MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -0.25A, -60V, To-92-3; Transistor Polarity Microchip | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 60 volts | |||||
| PD | 1000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-92; SOT3; TO-92-3 | TO-92; TO-92 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-3; TO-92 | TO-92; TO-226-3, TO-92-3 (TO-226AA) |
