Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP2450N8-G VP2450N8-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1117595-VP2450N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 160mA (Tj) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 190pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 Ohm @ 100mA, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
Request a Quote
Description
Manufacturer: Microchip Technology Win Source Part Number: 1117595-VP2450N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 160mA (Tj) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 190pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 Ohm @ 100mA, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The product is a P-Channel Enhancement-Mode Vertical DMOS FET with a maximum drain-to-source voltage of -500V and a continuous drain current rating of -160mA. It operates effectively within a temperature range of -55¬8C to +150¬8C and has a power dissipation capability of 1.6W. The device features low power drive requirements, high input impedance, and fast switching speeds, making it suitable for various applications including motor controls, converters, amplifiers, and power supply circuits. The on-state resistance is specified at 30 ohms when tested at a gate-source voltage of -10V. The device is also RoHS compliant, ensuring it meets environmental regulations.

Datasheet Summary
Powered by GS/AI

The product is a P-Channel Enhancement-Mode Vertical DMOS FET with a maximum drain-to-source voltage of -500V and a continuous drain current rating of -160mA. It operates effectively within a temperature range of -55¬8C to +150¬8C and has a power dissipation capability of 1.6W. The device features low power drive requirements, high input impedance, and fast switching speeds, making it suitable for various applications including motor controls, converters, amplifiers, and power supply circuits. The on-state resistance is specified at 30 ohms when tested at a gate-source voltage of -10V. The device is also RoHS compliant, ensuring it meets environmental regulations.

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP2450N8-G - 1117595-VP2450N8-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP2450N8-G
1117595-VP2450N8-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP2450N8-G 1117595-VP2450N8-G
Manufacturer: Microchip Technology Win Source Part Number: 1117595-VP2450N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 160mA (Tj) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 190pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 Ohm @ 100mA, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1117595-VP2450N8-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 160mA (Tj)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Input Capacitance: 190pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 Ohm @ 100mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - VP2450N8-G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
VP2450N8-G
Single FETs, MOSFETs VP2450N8-G
MOSFET P-CH 500V 160MA TO243AA

MOSFET P-CH 500V 160MA TO243AA

Supplier's Site Datasheet
MOSFETs - 1779737P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1779737P
MOSFETs 1779737P
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -500

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -500

Supplier's Site
MOSFETs - 1779737 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1779737
MOSFETs 1779737
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -500

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -500

Supplier's Site
MOSFETs - 1779709 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1779709
MOSFETs 1779709
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -500

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -500

Supplier's Site
Single FETs, MOSFETs - VP2450N8-GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP2450N8-GDKR-ND
Single FETs, MOSFETs VP2450N8-GDKR-ND
P-Channel 500V 160mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 500V 160mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - VP2450N8-GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP2450N8-GTR-ND
Single FETs, MOSFETs VP2450N8-GTR-ND
P-Channel 500V 160mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 500V 160mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - VP2450N8-GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP2450N8-GCT-ND
Single FETs, MOSFETs VP2450N8-GCT-ND
P-Channel 500V 160mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 500V 160mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Singapore
500V 160MA MOSFET Transistor
278-VP2450N8-G
500V 160MA MOSFET Transistor 278-VP2450N8-G
MOSFET P-CH 500V 160MA TO243AA Product overview: VP2450N8-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 160MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 160MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VP2450N8-G can be used for catalog matching and distributor lookup.

MOSFET P-CH 500V 160MA TO243AA Product overview: VP2450N8-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 160MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 160MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VP2450N8-G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VP2450N8-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VP2450N8-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VP2450N8-G
MOSFET P-CH 500V 160MA TO243AA

MOSFET P-CH 500V 160MA TO243AA

Supplier's Site
Mosfet, -500V, 0.16A, 150Deg C, 1.6W; Transistor Polarity Microchip - 04AJ4899 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, -500V, 0.16A, 150Deg C, 1.6W; Transistor Polarity Microchip
04AJ4899
Mosfet, -500V, 0.16A, 150Deg C, 1.6W; Transistor Polarity Microchip 04AJ4899
MOSFET, -500V, 0.16A, 150DEG C, 1.6W; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-500V; On Resistance Rds(on):30ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Power RoHS Compliant: Yes

MOSFET, -500V, 0.16A, 150DEG C, 1.6W; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-500V; On Resistance Rds(on):30ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 500V 30Ohm

MOSFET 500V 30Ohm

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) RS Components, Ltd. RS Components, Ltd. DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1117595-VP2450N8-G VP2450N8-G 1779737P 1779737 VP2450N8-GDKR-ND 278-VP2450N8-G VP2450N8-G 04AJ4899 VP2450N8-G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP2450N8-G Single FETs, MOSFETs MOSFETs MOSFETs Single FETs, MOSFETs 500V 160MA MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, -500V, 0.16A, 150Deg C, 1.6W; Transistor Polarity Microchip MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 500 volts 500 volts 500 volts
PD 1600 milliwatts 1600 milliwatts 1.6 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT89; TO-243AA (SOT-89) SOT89; TO-243AA SOT89; SOT-89 Sot-89 TO-243AA Tape & Reel (TR) TO-243AA TO-3
Unlock Full Specs
to access all available technical data