Manufacturer: Microchip Technology
Win Source Part Number: 1117315-VN0300L-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 640mA (Tj)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Input Capacitance: 190pF @ 20V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 640MA TO92-3 Product overview: VN0300L-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 640MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 640MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VN0300L-G can be used for catalog matching and distributor lookup.
N-Channel 30V 640mA (Tj) 1W (Tc) Through Hole TO-92-3
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 30V,
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 30V,
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 30V,
N-CHANNEL MOSFET, THROUGH-HOLE MOUNT, CASE: TO-92-3, DRAIN SOURCE BREAKDOWN VOLTAGE: 30 V, CONTINUOUS DRAIN CURRENT: 640 MA, DRAIN SOURCE RESISTANCE: 1.2 OHMS, GATE SOURCE THRESHOLD VOLTAGE: 800 MV, POWER DISSIPATION: 1 W. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 30V 640MA TO92-3
MOSFET, N-CH, 0.64A, 30V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:640mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET, N-CH, 0.64A, 30V, TO-92-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:640mA; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1117315-VN0300L-G | 278-VN0300L-G | VN0300L-G-ND | 1779871P | 1779871 | VN0300L-G | 87582012 | VN0300L-G | 44AC3394 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN0300L-G | 30V 640MA MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFET | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 0.64A, 30V, To-92-3; Transistor Polarity Microchip |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | |||||||
| PD | 1000 milliwatts | 1 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | TO-92; SOT3; TO-92-3 | Bag | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-92; TO-92 | TO-92; To-92 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-3; TO-92 |
