Microchip Technology, Inc. Single FETs, MOSFETs VP0808L-G

Description
P-Channel 80V 280mA (Tj) 1W (Tc) Through Hole TO-92-3
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Description
P-Channel 80V 280mA (Tj) 1W (Tc) Through Hole TO-92-3
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Datasheet
Datasheet Summary
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The D-MOSFET, P-Ch, -0.28A, -80V, TO-92-3 is a P-channel enhancement-mode vertical DMOS FET designed for various applications including motor controls, converters, amplifiers, and power supply circuits. It features a maximum drain-to-source voltage of -80V and a continuous drain current rating of -280mA. The device has a low on-state resistance of 5.0Oc at a gate-source voltage of -10V, which contributes to its efficiency in switching applications. This MOSFET is characterized by low power drive requirements, excellent thermal stability, and high input impedance, making it suitable for high-performance applications. The device is also free from thermal runaway and secondary breakdown, enhancing its reliability. The operating temperature range is from -55¬8C to +150¬8C, and it is packaged in a TO-92 form factor, which is compatible with standard PCB layouts. The product is RoHS compliant, ensuring it meets environmental regulations.

Datasheet Summary
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The D-MOSFET, P-Ch, -0.28A, -80V, TO-92-3 is a P-channel enhancement-mode vertical DMOS FET designed for various applications including motor controls, converters, amplifiers, and power supply circuits. It features a maximum drain-to-source voltage of -80V and a continuous drain current rating of -280mA. The device has a low on-state resistance of 5.0Oc at a gate-source voltage of -10V, which contributes to its efficiency in switching applications. This MOSFET is characterized by low power drive requirements, excellent thermal stability, and high input impedance, making it suitable for high-performance applications. The device is also free from thermal runaway and secondary breakdown, enhancing its reliability. The operating temperature range is from -55¬8C to +150¬8C, and it is packaged in a TO-92 form factor, which is compatible with standard PCB layouts. The product is RoHS compliant, ensuring it meets environmental regulations.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - VP0808L-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP0808L-G-ND
Single FETs, MOSFETs VP0808L-G-ND
P-Channel 80V 280mA (Tj) 1W (Tc) Through Hole TO-92-3

P-Channel 80V 280mA (Tj) 1W (Tc) Through Hole TO-92-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0808L-G - 1117586-VP0808L-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0808L-G
1117586-VP0808L-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0808L-G 1117586-VP0808L-G
Manufacturer: Microchip Technology Win Source Part Number: 1117586-VP0808L-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 280mA (Tj) Gate-Source Threshold Voltage: 4.5V @ 1mA Max Input Capacitance: 150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 5 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1117586-VP0808L-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 280mA (Tj)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 5 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

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Single FETs, MOSFETs - VP0808L-G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
VP0808L-G
Single FETs, MOSFETs VP0808L-G
MOSFET P-CH 80V 280MA TO92-3

MOSFET P-CH 80V 280MA TO92-3

Supplier's Site Datasheet
MOSFETs - 649535 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
649535
MOSFETs 649535
MOSFET, P-CHANNEL ENHANCEMENT-MODE

MOSFET, P-CHANNEL ENHANCEMENT-MODE

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VP0808L-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VP0808L-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VP0808L-G
MOSFET P-CH 80V 280MA TO92-3

MOSFET P-CH 80V 280MA TO92-3

Supplier's Site
Trans MOSFET P-CH 80V 0.28A 3-Pin TO-92 - 536-VP0808L-G - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET P-CH 80V 0.28A 3-Pin TO-92
536-VP0808L-G
Trans MOSFET P-CH 80V 0.28A 3-Pin TO-92 536-VP0808L-G
Trans MOSFET P-CH 80V 0.28A 3-Pin TO-92

Trans MOSFET P-CH 80V 0.28A 3-Pin TO-92

Supplier's Site
D-Mosfet, P-Ch, -0.28A, -80V, To-92-3; Transistor Polarity Microchip - 55AC4286 - Newark, An Avnet Company
Chicago, IL, United States
D-Mosfet, P-Ch, -0.28A, -80V, To-92-3; Transistor Polarity Microchip
55AC4286
D-Mosfet, P-Ch, -0.28A, -80V, To-92-3; Transistor Polarity Microchip 55AC4286
D-MOSFET, P-CH, -0.28A, -80V, TO-92-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-280mA; Drain Source Voltage Vds:-80V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4.5V; Power RoHS Compliant: Yes

D-MOSFET, P-CH, -0.28A, -80V, TO-92-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-280mA; Drain Source Voltage Vds:-80V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 80V 5Ohm

MOSFET 80V 5Ohm

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number VP0808L-G-ND 1117586-VP0808L-G VP0808L-G 649535 VP0808L-G 536-VP0808L-G 55AC4286 VP0808L-G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0808L-G Single FETs, MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Trans MOSFET P-CH 80V 0.28A 3-Pin TO-92 D-Mosfet, P-Ch, -0.28A, -80V, To-92-3; Transistor Polarity Microchip MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; TO-92 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-3; TO-92
V(BR)DSS 80 volts 80 volts -80 volts
PD 1000 milliwatts 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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