The D-MOSFET, P-Ch, -0.28A, -80V, TO-92-3 is a P-channel enhancement-mode vertical DMOS FET designed for various applications including motor controls, converters, amplifiers, and power supply circuits. It features a maximum drain-to-source voltage of -80V and a continuous drain current rating of -280mA. The device has a low on-state resistance of 5.0Oc at a gate-source voltage of -10V, which contributes to its efficiency in switching applications. This MOSFET is characterized by low power drive requirements, excellent thermal stability, and high input impedance, making it suitable for high-performance applications. The device is also free from thermal runaway and secondary breakdown, enhancing its reliability. The operating temperature range is from -55¬8C to +150¬8C, and it is packaged in a TO-92 form factor, which is compatible with standard PCB layouts. The product is RoHS compliant, ensuring it meets environmental regulations.
MOSFET P-CH 80V 280MA TO92-3 Product overview: VP0808L-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 280MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 280MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VP0808L-G can be used for catalog matching and distributor lookup.
MOSFET P-CH 80V 280MA TO92-3
Manufacturer: Microchip Technology
Win Source Part Number: 1117586-VP0808L-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 280mA (Tj)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 5 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
MOSFET, P-CHANNEL ENHANCEMENT-MODE
P-Channel 80V 280mA (Tj) 1W (Tc) Through Hole TO-92-3
Trans MOSFET P-CH 80V 0.28A 3-Pin TO-92
MOSFET P-CH 80V 280MA TO92-3
D-MOSFET, P-CH, -0.28A, -80V, TO-92-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-280mA; Drain Source Voltage Vds:-80V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4.5V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-VP0808L-G | VP0808L-G | 1117586-VP0808L-G | 649535 | VP0808L-G-ND | 536-VP0808L-G | VP0808L-G | VP0808L-G | 55AC4286 |
| Product Name | 80V 280MA MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0808L-G | MOSFETs | Single FETs, MOSFETs | Trans MOSFET P-CH 80V 0.28A 3-Pin TO-92 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | D-Mosfet, P-Ch, -0.28A, -80V, To-92-3; Transistor Polarity Microchip |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | -80 volts | |||||
| Transconductance | 2.00E-4 kS | ||||||||
| PD | 1 milliwatts | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts |
