Manufacturer: Microchip Technology
Win Source Part Number: 036470-VP2110K1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120mA (Tj)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -100
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -100
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -100
MOSFET P-CH 100V 120MA TO236AB Product overview: VP2110K1-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VP2110K1-G can be used for catalog matching and distributor lookup.
P-Channel 100V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)
P-Channel 100V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)
P-Channel 100V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)
MOSFET P-CH 100V 120MA TO236AB
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -100V, 12 OHM ROHS COMPLIANT: YES
MOSFET, P-CH, -100V, -0.12A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-120mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):9ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Power RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 036470-VP2110K1-G | 2648951P | 278-VP2110K1-G | VP2110K1-GTR-ND | VP2110K1-G | VP2110K1-G | 24AC4035 | 57AC4336 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP2110K1-G | MOSFETs | 100V 120MA MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Channel Enhancement-Mode, -100V, 12 Ohm Rohs Compliant Microchip | Mosfet, P-Ch, -100V, -0.12A, Sot-23; Transistor Polarity Microchip |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| PD | 360 milliwatts | 360 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; SOT23; TO-236AB (SOT23) | SOT23; SOT-23 | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | TO-3; SOT23 |
