STMicroelectronics, Inc. TRANSISTORS - Transistors (BJT) - Arrays - ULN2801A ULN2801A

Description
Manufacturer: STMicroelectronics Win Source Part Number: 038473-ULN2801A Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: 8 NPN Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -20°C to 150°C (TJ) Case / Package: 18-DIP Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.6V @ 500μA, 350mA Typical Gain (hFE) (Min): 1000 @ 350mA, 2V Maximum Power Dissipation: 2.25W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors (BJT) - Arrays - ULN2801A - 038473-ULN2801A - Win Source Electronics
    Win Source Electronics
  • Bipolar Transistor Arrays - ULN2801A - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Bipolar Transistor Arrays - 497-2354-5-ND - DigiKey
    DigiKey
  • Darlington Pairs - 1688977 - RS Components, Ltd.
    RS Components, Ltd.
  • Transistor - 8333182 - Radwell International
    Radwell International
  • STMICROELECTRONICS ULN2801A Bipolar Transistor Array, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP - 761-ULN2801A - Utmel Electronic Limited
    Utmel Electronic Limited
  • TRANSISTOR; 1W DISSIPATION - 70013594 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - ULN2801A - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 2.25 W, 500 Ma, 1000, Dip Rohs Compliant Stmicroelectronics - 26M4669 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 038473-ULN2801A Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: 8 NPN Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -20°C to 150°C (TJ) Case / Package: 18-DIP Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.6V @ 500μA, 350mA Typical Gain (hFE) (Min): 1000 @ 350mA, 2V Maximum Power Dissipation: 2.25W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - ULN2801A - 038473-ULN2801A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - ULN2801A
038473-ULN2801A
TRANSISTORS - Transistors (BJT) - Arrays - ULN2801A 038473-ULN2801A
Manufacturer: STMicroelectronics Win Source Part Number: 038473-ULN2801A Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: 8 NPN Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -20°C to 150°C (TJ) Case / Package: 18-DIP Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.6V @ 500μA, 350mA Typical Gain (hFE) (Min): 1000 @ 350mA, 2V Maximum Power Dissipation: 2.25W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 038473-ULN2801A
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: 8 NPN Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -20°C to 150°C (TJ)
Case / Package: 18-DIP
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min): 1000 @ 350mA, 2V
Maximum Power Dissipation: 2.25W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays - ULN2801A - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
ULN2801A
Bipolar Transistor Arrays ULN2801A
TRANS 8NPN DARL 50V 0.5A 18DIP

TRANS 8NPN DARL 50V 0.5A 18DIP

Supplier's Site Datasheet
Bipolar Transistor Arrays - 497-2354-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
497-2354-5-ND
Bipolar Transistor Arrays 497-2354-5-ND
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP

Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP

Buy Now Datasheet
Darlington Pairs - 1688977 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington Pairs
1688977
Darlington Pairs 1688977
Eight Darlington Array 500mA 50V DIP18

Eight Darlington Array 500mA 50V DIP18

Supplier's Site
Transistor - 8333182 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
8333182
Transistor 8333182
POWER BIPOLAR TRANSISTOR, 0.5A I(C), 8-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, DIP-18. FREE 2 YEAR RADWELL WARRANTY

POWER BIPOLAR TRANSISTOR, 0.5A I(C), 8-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, DIP-18. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
STMICROELECTRONICS ULN2801A Bipolar Transistor Array, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP - 761-ULN2801A - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
STMICROELECTRONICS ULN2801A Bipolar Transistor Array, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
761-ULN2801A
STMICROELECTRONICS ULN2801A Bipolar Transistor Array, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP 761-ULN2801A
STMICROELECTRONICS ULN2801A Bipolar Transistor Array, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP

STMICROELECTRONICS ULN2801A Bipolar Transistor Array, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP

Supplier's Site
TRANSISTOR; 1W DISSIPATION - 70013594 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
TRANSISTOR; 1W DISSIPATION
70013594
TRANSISTOR; 1W DISSIPATION 70013594
Darlington Array, 1 W (Max.) Power Dissipation Eight darlingtons with common emitters Output current to 500 mA Output voltage to 50 V Integral suppression diodes Output can be paralleled, inputs pinned opposite outputs to simplify board layout.

Darlington Array, 1 W (Max.) Power Dissipation

  • Eight darlingtons with common emitters
  • Output current to 500 mA
  • Output voltage to 50 V
  • Integral suppression diodes
    Output can be paralleled, inputs pinned opposite outputs to simplify board layout.
Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Darlington Transistors
ULN2801A
Darlington Transistors ULN2801A
Darlington Transistors Eight NPN Array

Darlington Transistors Eight NPN Array

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - ULN2801A - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
ULN2801A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) ULN2801A
TRANS 8NPN DARL 50V 0.5A 18DIP

TRANS 8NPN DARL 50V 0.5A 18DIP

Supplier's Site
Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 2.25 W, 500 Ma, 1000, Dip Rohs Compliant Stmicroelectronics - 26M4669 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 2.25 W, 500 Ma, 1000, Dip Rohs Compliant Stmicroelectronics
26M4669
Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 2.25 W, 500 Ma, 1000, Dip Rohs Compliant Stmicroelectronics 26M4669
Bipolar (BJT) Array Transistor, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000, DIP RoHS Compliant: Yes

Bipolar (BJT) Array Transistor, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000, DIP RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey RS Components, Ltd. Radwell International Utmel Electronic Limited Allied Electronics, Inc. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Bipolar RF Transistors Transistors Darlington Transistors RF Transistors Bipolar RF Transistors Transistors Darlington Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 038473-ULN2801A ULN2801A 497-2354-5-ND 1688977 8333182 761-ULN2801A 70013594 ULN2801A ULN2801A 26M4669
Product Name TRANSISTORS - Transistors (BJT) - Arrays - ULN2801A Bipolar Transistor Arrays Bipolar Transistor Arrays Darlington Pairs Transistor STMICROELECTRONICS ULN2801A Bipolar Transistor Array, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP TRANSISTOR; 1W DISSIPATION Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 2.25 W, 500 Ma, 1000, Dip Rohs Compliant Stmicroelectronics
Polarity NPN; 8 NPN Darlington 8 NPN Darlington; NPN NPN NPN; NPN NPN
Package Type SOT3; 18-DIP 18-DIP (0.300", 7.62mm) "18-DIP (0.300"", 7.62mm)" Dip DIP-18 TO-3
IC(max) 500 milliamps 500 milliamps 500 milliamps
VCEO 50 volts 50 volts 50 volts
Output Power 2.25 watts
Unlock Full Specs
to access all available technical data