The GANC035-650UTH is a 650 V, 35 mΩ normally-off Gallium Nitride (GaN) FET in a TOLT package (SOT8155-1), measuring 10.1 mm × 9.9 mm × 2.3 mm. It supports drain-source voltages up to 650 V, with a maximum continuous drain current of 44 A at 25 °C and total power dissipation of 131 W. The device features a gate-source voltage rating of ±20 V, a typical on-state resistance of 35 mΩ at 25 °C, and a junction temperature range of -55 °C to 150 °C. Thermal resistance from junction to case is 0.95 K/W. It is suited for data center, telecom, renewable energy, BESS, and industrial motor drive applications. The device meets the Absolute Maximum Rating System per IEC 60134.
The GANC035-650UTH is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TOLT package. This normally-off device combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies to deliver robust, high-efficiency switching performance.
Features and benefits
Applications
GANC035-650UTH/SOT81
GANC035-650UTH/SOT81
GANC035-650UTH/SOT81
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | GANC035-650UTHZ | 1727-GANC035-650UTHZDKR-ND |
| Product Name | 650 V, 35 mOhm Gallium Nitride (GaN) FET in a TOLT package | Single FETs, MOSFETs |
| Package Type | SOT8155-1 SOT8155-1 | 16-PowerSOP Module |
