The GANC035-650UTH is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TOLT package. This normally-off device combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies to deliver robust, high-efficiency switching performance.
Features and benefits Simplified driver design as standard MOSFET gate drivers can be used: 0 V to 10 or 12 V drive voltage Robust gate oxide with ±20 V VGS rating High gate threshold voltage for gate bounce immunity Low body diode VF for reduced losses and simplified dead-time adjustments Transient over-voltage capability for increased robustness
Applications Data center and telecom power supplies (1–12 kW PSU, AC-DC and DC-DC) Renewable energy power conversion (PV inverters and auxiliary supplies) Battery Energy Storage Systems (BESS) Industrial motor drives and automation power
The GANC035-650UTH is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TOLT package. This normally-off device combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies to deliver robust, high-efficiency switching performance.
Features and benefits
- Simplified driver design as standard MOSFET gate drivers can be used:
- 0 V to 10 or 12 V drive voltage
- Robust gate oxide with ±20 V VGS rating
- High gate threshold voltage for gate bounce immunity
- Low body diode VF for reduced losses and simplified dead-time adjustments
- Transient over-voltage capability for increased robustness
Applications
- Data center and telecom power supplies (1–12 kW PSU, AC-DC and DC-DC)
- Renewable energy power conversion (PV inverters and auxiliary supplies)
- Battery Energy Storage Systems (BESS)
- Industrial motor drives and automation power
