GANC050-650UTH is a 650 V, 50 mΩ gallium nitride (GaN) FET in a TOLT package. This normally-off device combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies to deliver robust, high-efficiency switching performance.
Features and benefits
Simplified driver design as standard MOSFET gate drivers can be used:
0 V to 10 or 12 V drive voltage
Applications
Data center and telecom power supplies (AC-DC and DC-DC)
Photovoltaics (PV) inverters
Battery Energy Storage Systems (BESS)
Industrial motor drives and automation power
GANC050-650UTH is a 650 V, 50 mΩ gallium nitride (GaN) FET in a TOLT package. This normally-off device combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies to deliver robust, high-efficiency switching performance.
Features and benefits
- Simplified driver design as standard MOSFET gate drivers can be used:
- 0 V to 10 or 12 V drive voltage
Applications
- Data center and telecom power supplies (AC-DC and DC-DC)
- Photovoltaics (PV) inverters
- Battery Energy Storage Systems (BESS)
- Industrial motor drives and automation power
