GANC050-650UTH is a 650 V, 50 mΩ gallium nitride (GaN) FET in a TOLT package, measuring 10.1 mm × 9.9 mm × 2.3 mm with 16 leads and top-side cooling. It has a drain-source voltage rating of 650 V, a continuous drain current of 32 A at 25 °C, and a total power dissipation of 104 W at 25 °C. The gate-source voltage range is -20 V to 20 V, the junction temperature range is -55 °C to 150 °C, and the thermal resistance from junction to case is 1.2 K/W. The device is designed for data center and telecom power supplies, photovoltaic inverters, battery energy storage systems, and industrial motor drives.
GANC050-650UTH is a 650 V, 50 mΩ gallium nitride (GaN) FET in a TOLT package. This normally-off device combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies to deliver robust, high-efficiency switching performance.
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Transistors |
| Product Number | GANC050-650UTHZ |
| Product Name | 650 V, 50 mOhm Gallium Nitride (GaN) FET in a TOLT package |
| Package Type | SOT8155-1 SOT8155-1 |
