N-channel 100 V MOSFET in an LFPAK56 (Power-SO8) package using TrenchMOS technology, designed for automotive applications. The device has a drain-source on-state resistance of 24.5 mΩ at 25 °C and 105 mΩ at 175 °C, with a continuous drain current of 30 A at 25 °C and 95 W total power dissipation. It is rated for a junction temperature up to 175 °C and features repetitive avalanche ruggedness with a non-repetitive avalanche energy of 45.2 mJ. The gate-source threshold voltage is 1 V minimum at 175 °C. The package is a surface-mounted LFPAK56 (SOT669) with dimensions up to 6.2 mm in length, 5.0 mm in width, and 1.2 mm in height. The product is qualified to AEC-Q101 standard.
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
N-Channel 100V 30A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 100V 30A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 100V 30A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 865018-BUK7Y38-100EX
Series: TrenchMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 100 V 30A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8
Package: SC-100, SOT-669
Package: Reel - TR
Mounting: Surface Mount
Family Name: BUK7Y38
Categories: Discrete Semiconductor Products
Case / Package: LFPAK56, Power-SO8
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Quantity per package: 1500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 26 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 1727-1111-6, 568-10266-1-ND, 568-10266-6, 568-10266-2-ND, 568-10266-2, 568-10266-1, 568-10266-6-ND, 1727-1111-2, 934067444115, 1727-1111-1, BUK7Y38-100EX-ND
BUK7Y38-100E - N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK7Y38-100EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK7Y38-100EX can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 30A LFPAK56
MOSFET N-channel 100 38 mo FET
MOSFET N-CH 100V 30A LFPAK56
MOSFET Transistor, N Channel, 30 A, 100 V, 0.0245 ohm, 10 V, 3 V RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK7Y38-100EX | 1727-1111-6-ND | 865018-BUK7Y38-100EX | 278-BUK7Y38-100EX | BUK7Y38-100EX | BUK7Y38-100EX | BUK7Y38-100EX | 90W4292 |
| Product Name | N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56 | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7Y38-100EX | N-Channel 100 V SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 30 A, 100 V, 0.0245 Ohm, 10 V, 3 V Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 30000 milliamps | 30000 milliamps | ||||||
| VGS(off) | 20 volts | |||||||
| PD | 95 milliwatts | 95000 milliwatts |
