N-channel 80 V, 41 mΩ standard level MOSFET in an LFPAK56 (Power-SO8, SOT669) package, designed for automotive applications. It supports a maximum drain-source voltage of 80 V, continuous drain current of 25 A at 25 °C, and power dissipation of 64 W. The device features a drain-source on-state resistance of 41 mΩ at 25 °C and 103 mΩ at 175 °C, with a junction temperature range of -55 °C to 175 °C. It meets the AEC-Q101 standard and is rated for repetitive avalanche operation with a non-repetitive avalanche energy of 23.8 mJ. The gate-source threshold voltage is 1 V minimum at 175 °C. Its thermal resistance from junction to mounting base is 2.31 K/W.
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
N-Channel 80V 25A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 80V 25A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 80V 25A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8
MOSFET N-channel 80 V 41 mo FET
MOSFET N-CH 80V 25A LFPAK56
| Nexperia B.V. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BUK7Y41-80EX | 1727-1486-2-ND | BUK7Y41-80EX | BUK7Y41-80EX |
| Product Name | N-channel 80 V, 41 mΩ standard level MOSFET in LFPAK56 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 80 volts | |||
| IDSS | 25000 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 64 milliwatts |
