N-channel 60 V MOSFET in LFPAK56 (Power-SO8) package using TrenchMOS technology for high-performance automotive applications. Designed to AEC Q101 standard with a maximum junction temperature of 175 °C, repetitive avalanche capability, and a true standard level gate. Drain-source on-state resistance is 4.8 mΩ at 25 °C with 10 V gate drive. Continuous drain current is 100 A at 25 °C mounting base temperature, limited by the package. Peak drain current is 595 A for pulses up to 10 µs. Total power dissipation is 238 W at 25 °C. Gate-drain charge is 22.2 nC at 10 V gate voltage and 48 V drain voltage.
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
BUK7Y4R8-60E - N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK7Y4R8-60EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK7Y4R8-60EX can be used for catalog matching and distributor lookup.
N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 60V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 770667-BUK7Y4R8-60EX
Series: TrenchMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: SC-100, SOT-669
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Family Name: BUK7Y4R8-60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: LFPAK56, Power-SO8
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 73.1nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5520pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 238W (Tc)
Rds On (Maximum) @ Id, Vgs: 4.8 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): BUK7Y4R8-60E;
Introduction Date: February 20, 2013
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 100A LFPAK56
MOSFET, AEC-Q101, N-CH, 60V, 100A/LFPAK56 ROHS COMPLIANT: YES
MOSFET N-channel 60 V 4.8 mo FET
MOSFET N-CH 60V 100A LFPAK56
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK7Y4R8-60EX | 278-BUK7Y4R8-60EX | 1727-1487-1-ND | 770667-BUK7Y4R8-60EX | BUK7Y4R8-60EX | 73AH9776 | BUK7Y4R8-60EX | BUK7Y4R8-60EX |
| Product Name | N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56 | N-Channel 60 V SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK7Y4R8-60EX | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 60V, 100A/lfpak56 Rohs Compliant Nexperia | MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 100000 milliamps | 100000 milliamps | ||||||
| VGS(off) | 20 volts | |||||||
| PD | 238 milliwatts | 238000 milliwatts | 238000 milliwatts |
