Infineon Technologies AG Datasheets for Diodes
Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
Diodes: Learn more
| Product Name | Notes |
|---|---|
| Applications Information & communications technology Power transmission and distribution Designers who used this product also designed with ESD108-B1-CSP0201 | Low capacitance diodes for ESD protection ESD200-B1-CSP0201 | Multi purpose diodes... | |
| General-purpose diode for high-speed switching Summary of Features Hermetically sealed microwave package VBRmin 40V Potential Applications Circuit protection Voltage clamping High-level detecting and mixing Quality level for Engineering Models Applications... | |
| General-purpose diode for high-speed switching Summary of Features Hermetically sealed microwave package VBRmin 70V Potential Applications Circuit protection Voltage clamping High-level detecting and mixing Quality level for Engineering Models Applications... | |
| General-purpose diode for high-speed switching Summary of Features Hermetically sealed microwave package VBRmin 70V ESA Space Qualified ESCC Detail Spec. No.:5512/020/03 B Potential Applications Circuit protection Voltage clamping High-level detecting... | |
| General-purpose diode for high-speed switching Summary of Features Hermetically sealed microwave package VBRmin 70V ESA Space Qualified ESCC Detail Spec. No.:5512/020/03 B Potential Applications Circuit protection Voltage clamping High-level detecting... | |
| General-purpose diodes for high-speedswitching Summary of Features Hermetically sealed microwave package VBRmin 40V ESA Space Qualified ESCC Detail Spec. No.:5512/020/01 B Potential Applications Circuit protection Voltage clamping High-level detecting and... | |
| General-purpose diodes for high-speedswitching Summary of Features Hermetically sealed microwave package VBRmin 40V ESA Space Qualified ESCC Detail Spec. No.:5512/020/01 B Potential Applications Circuit protection Voltage clamping High-level detecting and... | |
| High Speed Switching Diode. Summary of Features For high-speed switching applications Electrical insulated diodes Pb-free (RoHS compliant) package1) Qualified according AEC Q101 | |
| Home // Products // RF // RF Diode // RF Pin Diode // Antenna Switch // BAR65-03W | |
| Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and... | |
| Low VF Schottky Diode Summary of Features Reverse voltage: 30 V Forward current: 0.5 A Low forward voltage and smallest package form factor (1.0 x 0.6 x < 0.4 mm)... | |
| Low VF Schottky Diode Summary of Features Reverse voltage: 30 V Forward current: 1 A Low forward voltage and smallest package form factor (1.0 x 0.6 x < 4 mm)... | |
| Medium Power AF Schottky Diode. Summary of Features Forward current: 0.5 A Reverse voltage: 30 V Low capacitance, low reverse current For high efficiency DC/DC conversion, fast switching, protecting and... | |
| Medium Power AF Schottky Diode Summary of Features Forward current: 1 A Reverse voltage: 30 V Low forward voltage, low reverse current For high efficiency DC/DC conversion, fast switching, protection... | |
| Medium Power AF Schottky Diode Summary of Features Forward current: 1 A Reverse voltage: 30 V Very low forward voltage (typ. 0.41V @ IF = 1A) For high efficiency DC/DC... | |
| Reverse voltage: 30 V.Forward current: 0.9 A.Small diode quad array for polarity independence,reverse polarity protection and low loss bridge rectification.Very low forward voltage:0.5 V typ. @ 0.7 A (per diode).Fast... | |
| Reverse voltage: 40 V.Forward current: 0.2 A.Small diode quad array for polarity independance,reverse polarity protection and low loss bridge rectification.Very low forward voltage: 0.55 @ 0.1 A (per diode).Fast switching... | |
| Silicon PIN Diode Summary of Features For low loss RF switches and attenuators Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.25 pF) Low... | |
| Silicon PIN Diode Summary of Features Series diode for mobile communication in low loss transmit-receiver switches Band switch for TV-tuners Very low forward resistance (typ. 0.65 Ω @ 5 mA)... | |
| Silicon PIN Diodes Summary of Features PIN diode for high speed switching of RF signals Very low forward resistance (low insertion loss) Very low capacitance (high isolation) For frequencies up... | |
| Silicon Schottky Diode Summary of Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing BAS70-04S: For orientation in reel see Package information below Pb-free (RoHS... | |
| Silicon Schottky Diode Summary of Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Pb-free (RoHS compliant) package Applications 3D ToF camera for in-cabin monitoring... | |
| Silicon Schottky Diode Summary of Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Pb-free (RoHS compliant) package Applications Automotive 48 V battery management system... | |
| Silicon Schottky Diode Summary of Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Pb-free (RoHS compliant) package Applications Diesel direct injection High-performance cockpit controller... | |
| Silicon Schottky Diode Summary of Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Pb-free (RoHS compliant) package Applications Smart Thermostat Designers who used this... | |
| This Infineon cost optimized RF PIN diode is designed for high performance switches. Its shunt configuration results in reduces parasitic inductance and is mostly suited for high-speed switching applications. Summary... | |
| This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and... | |
| This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its very low capacitance... | |
| This Infineon RF PIN diode provides high-voltage handling capabilities and comes with low loss and low distortion levels. Its low forward resistance, low capacitance and low inductance simplify design and... | |
| This Infineon RF PIN diode provides high-voltage handling capabilities, comes with low loss and offers low distortion levels. Its low forward resistance, low capacitance and low inductance simplify design-in and... | |
| This Infineon RF PIN diode provides high-voltage handling capabilities, comes with low loss and offers low distortion levels. Its low forward resistance, low capacitance and low inductance simplify design-in and... | |
| This Infineon RF PIN diodes provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and low forward... | |
| This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low... | |
| This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction... |
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