Nexperia B.V. 30 V, N-channel Trench MOSFET PXN018-30QLJ

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

• Logic-level compatible
• Trench MOSFET technology
• MLPAK33 package (3.3 x 3.3 mm footprint)

Applications

• DC-to-DC converters
• Battery management
• Low-side load-switch
• Switching circuits

PXN018-30QL/SOT8002/MLPAK33 Product overview: PXN018-30QLJ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PXN018-30QLJ can be used for catalog matching and distributor lookup.

Alternative Parts (Cross-Reference): Cross
Manufacturer: Nexperia USA Inc.
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 19.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V

30 V, N-channel Trench MOSFET

30 V, N-channel Trench MOSFET

30 V, N-channel Trench MOSFET