P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) surface-mounted plastic package measuring 3.3 x 3.3 x 0.8 mm, using Trench MOSFET technology. It has a drain-source voltage rating of -30 V, a gate-source voltage range of -25 to 25 V, and a continuous drain current of -8 A at 25 °C with a 6 cm² drain pad on FR4 PCB. The on-state resistance is 13.6 mΩ at -10 V gate-source voltage and -8.1 A drain current, and 17.9 mΩ at -4.5 V gate-source voltage and -6.8 A drain current. The device is logic-level compatible and suitable for high-side load switching, battery management, DC-to-DC conversion, and switching circuits.
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 30V 8A (Ta), 24.7A (Tc) 1.7W (Ta), 16W (Tc) Surface Mount MLPAK33
P-Channel 30V 8A (Ta), 24.7A (Tc) 1.7W (Ta), 16W (Tc) Surface Mount MLPAK33
P-Channel 30V 8A (Ta), 24.7A (Tc) 1.7W (Ta), 16W (Tc) Surface Mount MLPAK33
P-CHANNEL TRENCH MOSFET
MOSFET, P-CH, 30V, 12.8A, 150DEG C, 4.2W ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PXP015-30QLJ | 1727-PXP015-30QLJCT-ND | PXP015-30QLJ | 29AK4259 |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 30V, 12.8A, 150Deg C, 4.2W Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | -30 volts | |||
| IDSS | -12800 milliamps | |||
| VGS(off) | 25 volts | |||
| PD | 4.2 milliwatts |
