P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) surface-mounted plastic package measuring 3.3 x 3.3 x 0.8 mm, using Trench MOSFET technology. It is logic-level compatible with a maximum drain-source voltage of -30 V, continuous drain current of -8.9 A at 25 °C ambient, and on-state resistance of 11.1 mΩ at -10 V gate-source voltage and 25 °C junction temperature. The device is rated for a junction temperature range of -55 °C to 150 °C and is suitable for high-side load switching, battery management, DC-to-DC conversion, and switching circuits.
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 30V 8.9A (Ta), 38.8A (Tc) 1.7W (Ta), 32W (Tc) Surface Mount MLPAK33
P-Channel 30V 8.9A (Ta), 38.8A (Tc) 1.7W (Ta), 32W (Tc) Surface Mount MLPAK33
P-Channel 30V 8.9A (Ta), 38.8A (Tc) 1.7W (Ta), 32W (Tc) Surface Mount MLPAK33
MOSFET, P-CH, 30V, 15.2A, 150DEG C, 4.8W ROHS COMPLIANT: YES
P-CHANNEL TRENCH MOSFET
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PXP012-30QLJ | 1727-PXP012-30QLJDKR-ND | 29AK4258 | PXP012-30QLJ |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, P-Ch, 30V, 15.2A, 150Deg C, 4.8W Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | -30 volts | |||
| IDSS | -15200 milliamps | |||
| VGS(off) | 25 volts | |||
| PD | 4.8 milliwatts |
