Nexperia B.V. 30 V, N-channel Trench MOSFET PXN010-30QLJ

Description
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs MLPAK33 package (3.3 x 3.3 mm footprint) Applications DC to DC conversion Battery management Low-side load switch Switching circuits
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs MLPAK33 package (3.3 x 3.3 mm footprint) Applications DC to DC conversion Battery management Low-side load switch Switching circuits
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Datasheet
Datasheet Summary
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N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) surface-mounted plastic package with a 3.3 x 3.3 mm footprint, using Trench MOSFET technology for high-efficiency switching applications such as DC-to-DC conversion, battery management, and load switching. The device features logic-level compatibility, ultra-low gate charge (Qg) and gate-drain charge (Qgd), superfast switching with soft-recovery, and low EMI due to minimized spiking and ringing. It supports a drain-source voltage of up to 30 V, a continuous drain current of 10.3 A at 25 °C, and a drain-source on-resistance of 8.7 mΩ at 10 V gate-source voltage and 25 °C. The maximum junction temperature is 150 °C.

Datasheet Summary
Powered by GS/AI

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) surface-mounted plastic package with a 3.3 x 3.3 mm footprint, using Trench MOSFET technology for high-efficiency switching applications such as DC-to-DC conversion, battery management, and load switching. The device features logic-level compatibility, ultra-low gate charge (Qg) and gate-drain charge (Qgd), superfast switching with soft-recovery, and low EMI due to minimized spiking and ringing. It supports a drain-source voltage of up to 30 V, a continuous drain current of 10.3 A at 25 °C, and a drain-source on-resistance of 8.7 mΩ at 10 V gate-source voltage and 25 °C. The maximum junction temperature is 150 °C.

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PXN010-30QLJ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PXN010-30QLJ
30 V, N-channel Trench MOSFET PXN010-30QLJ
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs MLPAK33 package (3.3 x 3.3 mm footprint) Applications DC to DC conversion Battery management Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Trench MOSFET technology
  • Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery
  • Low spiking and ringing for low EMI designs
  • MLPAK33 package (3.3 x 3.3 mm footprint)

Applications

  • DC to DC conversion
  • Battery management
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
MOSFET Transistor
278-PXN010-30QLJ
MOSFET Transistor 278-PXN010-30QLJ
PXN010-30QL/SOT8002/ MLPAK33 Product overview: PXN010-30QLJ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PXN010-30QLJ can be used for catalog matching and distributor lookup.

PXN010-30QL/SOT8002/MLPAK33 Product overview: PXN010-30QLJ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PXN010-30QLJ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PXN010-30QLJDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PXN010-30QLJDKR-ND
Single FETs, MOSFETs 1727-PXN010-30QLJDKR-ND
N-Channel 30V 10.3A (Ta), 28A (Tc) 1.7W (Ta), 12.5W (Tc) Surface Mount MLPAK33

N-Channel 30V 10.3A (Ta), 28A (Tc) 1.7W (Ta), 12.5W (Tc) Surface Mount MLPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PXN010-30QLJTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PXN010-30QLJTR-ND
Single FETs, MOSFETs 1727-PXN010-30QLJTR-ND
N-Channel 30V 10.3A (Ta), 28A (Tc) 1.7W (Ta), 12.5W (Tc) Surface Mount MLPAK33

N-Channel 30V 10.3A (Ta), 28A (Tc) 1.7W (Ta), 12.5W (Tc) Surface Mount MLPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PXN010-30QLJCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PXN010-30QLJCT-ND
Single FETs, MOSFETs 1727-PXN010-30QLJCT-ND
N-Channel 30V 10.3A (Ta), 28A (Tc) 1.7W (Ta), 12.5W (Tc) Surface Mount MLPAK33

N-Channel 30V 10.3A (Ta), 28A (Tc) 1.7W (Ta), 12.5W (Tc) Surface Mount MLPAK33

Buy Now Datasheet
Discrete Semiconductor Products Transistors- FETs, MOSFETs- Single FETs, MOSFETs - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Discrete Semiconductor Products Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Manufacturer: Nexperia USA Inc. Category: Discrete Semiconductor Products Transistors- FETs, MOSFETs- Single FETs, MOSFETs Series: TrenchMOS™ Package: Tape & Reel (TR) Cut Tape (CT) Product Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MLPAK33

Manufacturer: Nexperia USA Inc.
Category: Discrete Semiconductor Products Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Series: TrenchMOS™
Package: Tape & Reel (TR) Cut Tape (CT)
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MLPAK33

Buy Now Datasheet
Mosfet, N-Ch, 30V, 10.3A, Mlpak33 Rohs Compliant Nexperia - 21AJ6802 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 10.3A, Mlpak33 Rohs Compliant Nexperia
21AJ6802
Mosfet, N-Ch, 30V, 10.3A, Mlpak33 Rohs Compliant Nexperia 21AJ6802
MOSFET, N-CH, 30V, 10.3A, MLPAK33 ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 10.3A, MLPAK33 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PXN010-30QLJ - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PXN010-30QLJ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PXN010-30QLJ
PXN010-30QL/SOT8002/ MLPAK33

PXN010-30QL/SOT8002/MLPAK33

Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PXN010-30QLJ 278-PXN010-30QLJ 1727-PXN010-30QLJDKR-ND 21AJ6802 PXN010-30QLJ
Product Name 30 V, N-channel Trench MOSFET MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products Transistors- FETs, MOSFETs- Single FETs, MOSFETs Mosfet, N-Ch, 30V, 10.3A, Mlpak33 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 30 volts 30 volts
IDSS 10300 milliamps
VGS(off) 20 volts
PD 1.7 milliwatts 4.3 milliwatts
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