30 V, P-channel Trench MOSFET in an MLPAK33 (SOT8002) surface-mounted plastic package measuring 3.3 x 3.3 x 0.8 mm, designed for high-side load switching, battery management, DC-to-DC conversion, and switching circuits. It has a drain-source voltage rating of -30 V, a continuous drain current of -8.6 A at 25 °C, and a drain-source on-state resistance of 11.3 to 13.3 mΩ at -10 V gate-source voltage. The device is logic level compatible and meets IEC 60134 absolute maximum ratings. Thermal resistance from junction to ambient is 60 to 75 K/W with a 6 cm² drain pad. It operates with a junction temperature range of -55 °C to 150 °C.
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 30V 8.6A (Ta), 42.5A (Tc) 1.7W (Ta), 40W (Tc) Surface Mount MLPAK33
P-Channel 30V 8.6A (Ta), 42.5A (Tc) 1.7W (Ta), 40W (Tc) Surface Mount MLPAK33
P-Channel 30V 8.6A (Ta), 42.5A (Tc) 1.7W (Ta), 40W (Tc) Surface Mount MLPAK33
MOSFET, P-CH, 30V, 8.6A, MLPAK33 ROHS COMPLIANT: YES
PXP013-30QL/SOT8002/
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PXP013-30QLJ | 1727-PXP013-30QLJTR-ND | 27AJ4943 | PXP013-30QLJ |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, P-Ch, 30V, 8.6A, Mlpak33 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | -30 volts | |||
| IDSS | -14700 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 4.8 milliwatts |
