Nexperia B.V. 100 V, N-channel Trench MOSFET PXN014-100QEJ

Description
NextPower 100 V, enhanced logic level gate drive MOSFET in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package. Features and benefits Logic-level compatible Low Qrr for higher efficiency and lower spiking Low QG × RDSon FOM for high efficiency switching applications Strong avalanche energy rating (EAS) and 100% tested Ha-free and RoHS compliant MLPAK33 package Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint) Applications Synchronous rectifier in AC-DC and DC-DC Primary side switch – 48 V DC-DC BLDC motor control USB-PD adapters Full-bridge and half-bridge applications Flyback and resonant topologies
  • 100 V, N-channel Trench MOSFET - PXN014-100QEJ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PXN014-100QEJTR-ND - DigiKey
    DigiKey
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Description
NextPower 100 V, enhanced logic level gate drive MOSFET in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package. Features and benefits Logic-level compatible Low Qrr for higher efficiency and lower spiking Low QG × RDSon FOM for high efficiency switching applications Strong avalanche energy rating (EAS) and 100% tested Ha-free and RoHS compliant MLPAK33 package Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint) Applications Synchronous rectifier in AC-DC and DC-DC Primary side switch – 48 V DC-DC BLDC motor control USB-PD adapters Full-bridge and half-bridge applications Flyback and resonant topologies
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Datasheet
Datasheet Summary
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100 V, N-channel Trench MOSFET in an MLPAK33 (SOT8002) surface-mounted package measuring 3.3 mm x 3.3 mm x 0.8 mm, designed for high-efficiency switching applications such as synchronous rectification, DC-DC conversion, and motor control. It features logic-level gate drive compatibility, a drain-source on-state resistance of 11.8 mΩ to 19 mΩ depending on gate voltage, a total gate charge up to 46 nC, and a non-repetitive avalanche energy rating of 232 mJ. The device is RoHS compliant and rated for a junction temperature up to 150 °C with a maximum continuous drain current of 44 A at 25 °C mounting base temperature.

Datasheet Summary
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100 V, N-channel Trench MOSFET in an MLPAK33 (SOT8002) surface-mounted package measuring 3.3 mm x 3.3 mm x 0.8 mm, designed for high-efficiency switching applications such as synchronous rectification, DC-DC conversion, and motor control. It features logic-level gate drive compatibility, a drain-source on-state resistance of 11.8 mΩ to 19 mΩ depending on gate voltage, a total gate charge up to 46 nC, and a non-repetitive avalanche energy rating of 232 mJ. The device is RoHS compliant and rated for a junction temperature up to 150 °C with a maximum continuous drain current of 44 A at 25 °C mounting base temperature.

Suppliers

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Supplier Links
100 V, N-channel Trench MOSFET - PXN014-100QEJ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
100 V, N-channel Trench MOSFET
PXN014-100QEJ
100 V, N-channel Trench MOSFET PXN014-100QEJ
NextPower 100 V, enhanced logic level gate drive MOSFET in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package. Features and benefits Logic-level compatible Low Qrr for higher efficiency and lower spiking Low QG × RDSon FOM for high efficiency switching applications Strong avalanche energy rating (EAS) and 100% tested Ha-free and RoHS compliant MLPAK33 package Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint) Applications Synchronous rectifier in AC-DC and DC-DC Primary side switch – 48 V DC-DC BLDC motor control USB-PD adapters Full-bridge and half-bridge applications Flyback and resonant topologies

NextPower 100 V, enhanced logic level gate drive MOSFET in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Logic-level compatible
  • Low Qrr for higher efficiency and lower spiking
  • Low QG × RDSon FOM for high efficiency switching applications
  • Strong avalanche energy rating (EAS) and 100% tested
  • Ha-free and RoHS compliant MLPAK33 package
  • Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)

Applications

  • Synchronous rectifier in AC-DC and DC-DC
  • Primary side switch – 48 V DC-DC
  • BLDC motor control
  • USB-PD adapters
  • Full-bridge and half-bridge applications
  • Flyback and resonant topologies
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PXN014-100QEJTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PXN014-100QEJTR-ND
Single FETs, MOSFETs 1727-PXN014-100QEJTR-ND
PXN014-100QE/SOT8002 /MLPAK33

PXN014-100QE/SOT8002/MLPAK33

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Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PXN014-100QEJ 1727-PXN014-100QEJTR-ND
Product Name 100 V, N-channel Trench MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts
IDSS 14000 milliamps
VGS(off) 20 volts
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