N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 11.4A (Ta), 41.8A (Tc) 1.9W (Ta), 26W (Tc) Surface Mount MLPAK33
N-Channel 30V 11.4A (Ta), 41.8A (Tc) 1.9W (Ta), 26W (Tc) Surface Mount MLPAK33
N-Channel 30V 11.4A (Ta), 41.8A (Tc) 1.9W (Ta), 26W (Tc) Surface Mount MLPAK33
PXN9R0-30QL - 30 V, N-channel Trench MOSFET
PXN9R0-30QL/SOT8002/
30V 9.1mΩ@11.4A,10V 2.5V@250uA N Channel PDFN-8(3x3.1) MOSFETs ROHS
PXN9R0-30QL/SOT8002/
MOSFET, N-CH, 30V, 11.4A, MLPAK33 ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | RS Components, Ltd. | Rochester Electronics | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PXN9R0-30QLJ | 1727-PXN9R0-30QLJCT-ND | 2402001 | PXN9R0-30QLJ | PXN9R0-30QLJ | PXN9R0-30QLJ | PXN9R0-30QLJ | 27AJ4941 |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 11.4A, Mlpak33 Rohs Compliant Nexperia | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| IDSS | 17300 milliamps | 11400 milliamps | ||||||
| VGS(off) | 20 volts | 2.5 volts | ||||||
| PD | 4.5 milliwatts | 1900 milliwatts | 1900 milliwatts |
