N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package measuring 3.3 x 3.3 x 0.8 mm, using Trench MOSFET technology. The device has a drain-source voltage rating of 25 V, a gate-source voltage range of ±20 V, and a continuous drain current of 13.1 A at 25 °C with VGS = 10 V. The on-state resistance is 5.3 mΩ at VGS = 10 V and ID = 13.1 A, and 6.8 mΩ at VGS = 4.5 V and ID = 11.2 A. Total gate charge is 8.1 nC at VDS = 12.5 V and VGS = 4.5 V. The package features eight terminals with 0.65 mm pitch and is optimized for low EMI and high-efficiency switching in DC-DC conversion, battery management, and load switching applications.
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PXN6R2-25QL - 25 V, N-channel Trench MOSFET
N-Channel 25V 13.1A (Ta), 65A (Tc) 1.7W (Ta), 40.3W (Tc) Surface Mount MLPAK33
N-Channel 25V 13.1A (Ta), 65A (Tc) 1.7W (Ta), 40.3W (Tc) Surface Mount MLPAK33
N-Channel 25V 13.1A (Ta), 65A (Tc) 1.7W (Ta), 40.3W (Tc) Surface Mount MLPAK33
PXN6R2-25QL/SOT8002/
PXN6R2-25QL/SOT8002/
MOSFET, N-CH, 25V, 13.1A, MLPAK33 ROHS COMPLIANT: YES
| Nexperia B.V. | Rochester Electronics | DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PXN6R2-25QLJ | PXN6R2-25QLJ | 1727-PXN6R2-25QLJTR-ND | 2401992P | PXN6R2-25QLJ | PXN6R2-25QLJ | 21AJ6806 |
| Product Name | 25 V, N-channel Trench MOSFET | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 25V, 13.1A, Mlpak33 Rohs Compliant Nexperia | |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 25 volts | 25 volts | |||||
| IDSS | 22300 milliamps | 13100 milliamps | |||||
| VGS(off) | 20 volts | ||||||
| PD | 4.8 milliwatts | 1700 milliwatts |
