Nexperia B.V. 25 V, N-channel Trench MOSFET PXN6R2-25QLJ

Description
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs MLPAK33 package (3.3 x 3.3 mm footprint) Applications DC to DC conversion Battery management Low-side load switch Switching circuits
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs MLPAK33 package (3.3 x 3.3 mm footprint) Applications DC to DC conversion Battery management Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
25 V, N-channel Trench MOSFET - PXN6R2-25QLJ - Nexperia B.V.
Nijmegen, Netherlands
25 V, N-channel Trench MOSFET
PXN6R2-25QLJ
25 V, N-channel Trench MOSFET PXN6R2-25QLJ
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery Low spiking and ringing for low EMI designs MLPAK33 package (3.3 x 3.3 mm footprint) Applications DC to DC conversion Battery management Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Trench MOSFET technology
  • Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery
  • Low spiking and ringing for low EMI designs
  • MLPAK33 package (3.3 x 3.3 mm footprint)

Applications

  • DC to DC conversion
  • Battery management
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
MOSFETs - 2401992P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2401992P
MOSFETs 2401992P
25 V, N-channel Trench MOSFET

25 V, N-channel Trench MOSFET

Supplier's Site
MOSFETs - 2401991 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2401991
MOSFETs 2401991
25 V, N-channel Trench MOSFET

25 V, N-channel Trench MOSFET

Supplier's Site
MOSFETs - 2401992 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2401992
MOSFETs 2401992
25 V, N-channel Trench MOSFET

25 V, N-channel Trench MOSFET

Supplier's Site
Single FETs, MOSFETs - 1727-PXN6R2-25QLJTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PXN6R2-25QLJTR-ND
Single FETs, MOSFETs 1727-PXN6R2-25QLJTR-ND
N-Channel 25V 13.1A (Ta), 65A (Tc) 1.7W (Ta), 40.3W (Tc) Surface Mount MLPAK33

N-Channel 25V 13.1A (Ta), 65A (Tc) 1.7W (Ta), 40.3W (Tc) Surface Mount MLPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PXN6R2-25QLJDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PXN6R2-25QLJDKR-ND
Single FETs, MOSFETs 1727-PXN6R2-25QLJDKR-ND
N-Channel 25V 13.1A (Ta), 65A (Tc) 1.7W (Ta), 40.3W (Tc) Surface Mount MLPAK33

N-Channel 25V 13.1A (Ta), 65A (Tc) 1.7W (Ta), 40.3W (Tc) Surface Mount MLPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PXN6R2-25QLJCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PXN6R2-25QLJCT-ND
Single FETs, MOSFETs 1727-PXN6R2-25QLJCT-ND
N-Channel 25V 13.1A (Ta), 65A (Tc) 1.7W (Ta), 40.3W (Tc) Surface Mount MLPAK33

N-Channel 25V 13.1A (Ta), 65A (Tc) 1.7W (Ta), 40.3W (Tc) Surface Mount MLPAK33

Buy Now Datasheet
 - PXN6R2-25QLJ - Rochester Electronics
Newburyport, MA, United States
PXN6R2-25QL - 25 V, N-channel Trench MOSFET

PXN6R2-25QL - 25 V, N-channel Trench MOSFET

Supplier's Site Datasheet
Mosfet, N-Ch, 25V, 13.1A, Mlpak33 Rohs Compliant Nexperia - 21AJ6806 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 25V, 13.1A, Mlpak33 Rohs Compliant Nexperia
21AJ6806
Mosfet, N-Ch, 25V, 13.1A, Mlpak33 Rohs Compliant Nexperia 21AJ6806
MOSFET, N-CH, 25V, 13.1A, MLPAK33 ROHS COMPLIANT: YES

MOSFET, N-CH, 25V, 13.1A, MLPAK33 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PXN6R2-25QLJ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PXN6R2-25QLJ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PXN6R2-25QLJ
PXN6R2-25QL/SOT8002/ MLPAK33

PXN6R2-25QL/SOT8002/MLPAK33

Supplier's Site
Single FETs, MOSFETs - PXN6R2-25QLJ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PXN6R2-25QLJ
Single FETs, MOSFETs PXN6R2-25QLJ
PXN6R2-25QL/SOT8002/ MLPAK33

PXN6R2-25QL/SOT8002/MLPAK33

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. RS Components, Ltd. DigiKey Rochester Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PXN6R2-25QLJ 2401992P 1727-PXN6R2-25QLJTR-ND PXN6R2-25QLJ 21AJ6806 PXN6R2-25QLJ PXN6R2-25QLJ
Product Name 25 V, N-channel Trench MOSFET MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 25V, 13.1A, Mlpak33 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 25 volts 25 volts
IDSS 22300 milliamps 13100 milliamps
VGS(off) 20 volts
PD 4.8 milliwatts 1700 milliwatts
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