Infineon Technologies AG 1200V 16A IGBT Transistor IKW08T120FKSA1

Description
IGBT 1200V 16A TO247-3 Product overview: IKW08T120FKSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 16A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 16A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW08T120FKSA1 can be used for catalog matching and distributor lookup.
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Description
IGBT 1200V 16A TO247-3 Product overview: IKW08T120FKSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 16A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 16A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW08T120FKSA1 can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The IGBT, part number IKW08T120, is designed for high-performance applications with a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 8A. It features TrenchStop® and Fieldstop technology, which provides low conduction losses and improved thermal stability. The device has a collector-emitter saturation voltage of 1.7V at 25°C and a maximum power dissipation of 70W. This IGBT is suitable for use in frequency converters and uninterruptible power supplies, offering a short-circuit withstand time of 10µs. It is characterized by low EMI and gate charge, making it efficient for high-frequency applications. The device is RoHS compliant and features a maximum junction temperature of 150°C, with a thermal resistance from junction to case of 1.7 K/W. Engineers may consider this IGBT for projects requiring robust performance in demanding environments, particularly where efficiency and thermal management are critical.

Datasheet Summary
Powered by GS/AI

The IGBT, part number IKW08T120, is designed for high-performance applications with a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 8A. It features TrenchStop® and Fieldstop technology, which provides low conduction losses and improved thermal stability. The device has a collector-emitter saturation voltage of 1.7V at 25°C and a maximum power dissipation of 70W. This IGBT is suitable for use in frequency converters and uninterruptible power supplies, offering a short-circuit withstand time of 10µs. It is characterized by low EMI and gate charge, making it efficient for high-frequency applications. The device is RoHS compliant and features a maximum junction temperature of 150°C, with a thermal resistance from junction to case of 1.7 K/W. Engineers may consider this IGBT for projects requiring robust performance in demanding environments, particularly where efficiency and thermal management are critical.

Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
1200V 16A IGBT Transistor
279-IKW08T120FKSA1
1200V 16A IGBT Transistor 279-IKW08T120FKSA1
IGBT 1200V 16A TO247-3 Product overview: IKW08T120FKSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 16A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 16A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW08T120FKSA1 can be used for catalog matching and distributor lookup.

IGBT 1200V 16A TO247-3 Product overview: IKW08T120FKSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 16A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 16A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW08T120FKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - IKW08T120FKSA1 - Rochester Electronics
Newburyport, MA, United States
IKW08T120 - Discrete IGBT with Anti-Parallel Diode

IKW08T120 - Discrete IGBT with Anti-Parallel Diode

Supplier's Site Datasheet
Single IGBTs - IKW08T120FKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IKW08T120FKSA1-ND
Single IGBTs IKW08T120FKSA1-ND
IGBT NPT, Trench Field Stop 1200V 16A 70W Through Hole PG-TO247-3-1

IGBT NPT, Trench Field Stop 1200V 16A 70W Through Hole PG-TO247-3-1

Buy Now Datasheet
IGBTs - Single - IKW08T120FKSA1 - 874488-IKW08T120FKSA1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IKW08T120FKSA1
874488-IKW08T120FKSA1
IGBTs - Single - IKW08T120FKSA1 874488-IKW08T120FKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 874488-IKW08T120FKSA 1 Series: TrenchStop® Operating Temperature Range: -40°C ~ 150°C (TJ) Features: IGBT NPT, Trench Field Stop 1200 V 16 A 70 W Through Hole PG-TO247-3-1 Package: TO-247-3 Package: Tube Mounting: Through Hole Family Name: IKW08T120 Categories: Discrete Semiconductor Products Case / Package: PG-TO247-3-1 ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 30 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: SP000013885, IKW08T120, IKW08T120-ND

Manufacturer: Infineon Technologies
Win Source Part Number: 874488-IKW08T120FKSA1
Series: TrenchStop®
Operating Temperature Range: -40°C ~ 150°C (TJ)
Features: IGBT NPT, Trench Field Stop 1200 V 16 A 70 W Through Hole PG-TO247-3-1
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: IKW08T120
Categories: Discrete Semiconductor Products
Case / Package: PG-TO247-3-1
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 30
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SP000013885, IKW08T120, IKW08T120-ND

Buy Now Datasheet
Igbt, N, 1200V, 8A, To-247; Continuous Collector Current Infineon - 61M6730 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, N, 1200V, 8A, To-247; Continuous Collector Current Infineon
61M6730
Igbt, N, 1200V, 8A, To-247; Continuous Collector Current Infineon 61M6730
IGBT, N, 1200V, 8A, TO-247; Continuous Collector Current:16A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:70W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes

IGBT, N, 1200V, 8A, TO-247; Continuous Collector Current:16A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:70W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
IGBT - 108087163 - Radwell International
Willingboro, NJ, United States
INSULATED GATE BIPOLAR TRANSISTOR, 16A I(C), 1200V V(BR)CES, N-CHANNEL, TO-247AC. FREE 2 YEAR RADWELL WARRANTY

INSULATED GATE BIPOLAR TRANSISTOR, 16A I(C), 1200V V(BR)CES, N-CHANNEL, TO-247AC. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single IGBTs - IKW08T120FKSA1 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IKW08T120FKSA1
Single IGBTs IKW08T120FKSA1
IGBT 1200V 16A TO247-3

IGBT 1200V 16A TO247-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
IKW08T120FKSA1
IGBT Transistors IKW08T120FKSA1
IGBT Transistors LOW LOSS DuoPack 1200V 8A

IGBT Transistors LOW LOSS DuoPack 1200V 8A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IKW08T120FKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IKW08T120FKSA1
Discrete Semiconductor Products - Transistors - IGBTs IKW08T120FKSA1
IGBT 1200V 16A TO247-3

IGBT 1200V 16A TO247-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Rochester Electronics DigiKey Win Source Electronics Newark, An Avnet Company Radwell International ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 279-IKW08T120FKSA1 IKW08T120FKSA1 IKW08T120FKSA1-ND 874488-IKW08T120FKSA1 61M6730 108087163 IKW08T120FKSA1 IKW08T120FKSA1 IKW08T120FKSA1
Product Name 1200V 16A IGBT Transistor Single IGBTs IGBTs - Single - IKW08T120FKSA1 Igbt, N, 1200V, 8A, To-247; Continuous Collector Current Infineon IGBT Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
PD 70 milliwatts 70000 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) ? to 150 C (? to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type Tube TO-247; TO-247 TO-247; TO-247-3 SOT3; PG-TO247-3-1 TO-3; TO-247 TO-247; TO-247-3
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