The IGBT, part number IKW08T120, is designed for high-performance applications with a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 8A. It features TrenchStop® and Fieldstop technology, which provides low conduction losses and improved thermal stability. The device has a collector-emitter saturation voltage of 1.7V at 25°C and a maximum power dissipation of 70W. This IGBT is suitable for use in frequency converters and uninterruptible power supplies, offering a short-circuit withstand time of 10µs. It is characterized by low EMI and gate charge, making it efficient for high-frequency applications. The device is RoHS compliant and features a maximum junction temperature of 150°C, with a thermal resistance from junction to case of 1.7 K/W. Engineers may consider this IGBT for projects requiring robust performance in demanding environments, particularly where efficiency and thermal management are critical.
IGBT 1200V 16A TO247-3 Product overview: IKW08T120FKSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 16A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 16A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKW08T120FKSA1 can be used for catalog matching and distributor lookup.
IKW08T120 - Discrete IGBT with Anti-Parallel Diode
Manufacturer: Infineon Technologies
Win Source Part Number: 874488-IKW08T120FKSA
Series: TrenchStop®
Operating Temperature Range: -40°C ~ 150°C (TJ)
Features: IGBT NPT, Trench Field Stop 1200 V 16 A 70 W Through Hole PG-TO247-3-1
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: IKW08T120
Categories: Discrete Semiconductor Products
Case / Package: PG-TO247-3-1
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 30
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SP000013885, IKW08T120, IKW08T120-ND
IGBT NPT, Trench Field Stop 1200V 16A 70W Through Hole PG-TO247-3-1
INSULATED GATE BIPOLAR TRANSISTOR, 16A I(C), 1200V V(BR)CES, N-CHANNEL, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
IGBT 1200V 16A TO247-3
IGBT Transistors LOW LOSS DuoPack 1200V 8A
IGBT, N, 1200V, 8A, TO-247; Continuous Collector Current:16A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:70W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | DigiKey | Radwell International | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-IKW08T120FKSA1 | IKW08T120FKSA1 | 874488-IKW08T120FKSA1 | IKW08T120FKSA1-ND | 108087163 | IKW08T120FKSA1 | IKW08T120FKSA1 | IKW08T120FKSA1 | 61M6730 |
| Product Name | 1200V 16A IGBT Transistor | IGBTs - Single - IKW08T120FKSA1 | Single IGBTs | IGBT | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Igbt, N, 1200V, 8A, To-247; Continuous Collector Current Infineon | |
| PD | 70 milliwatts | 70000 milliwatts | |||||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ? to 150 C (? to 302 F) | |||
| Package Type | Tube | TO-247; TO-247 | SOT3; PG-TO247-3-1 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 |
