Infineon Technologies AG IGBT Discretes IKD04N60RF

Description
The RC-Drives 600 V, 4 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. Summary of Features Optimized parameters for up to 20% lower switching losses Operating range of DC to 30 kHz Max junction temperature 175°C Short circuit capability of 5µs Very tight parameter distribution Best in class current versus package size performance Smooth switching performance leading to low EMI levels Benefits Excellent cost/performance for hard switching applications Outstanding temperature stability Very good EMI behavior Up to 60% space saving on the PCB Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching Potential Applications Washing machines General purpose inverters Aircon compressors Hard switching topologies up to 1.0 kW
  • IGBT Discretes - IKD04N60RF - Infineon Technologies AG
    Infineon Technologies AG
  • Single IGBTs - IKD04N60RFTR-ND - DigiKey
    DigiKey
  • Single IGBTs - IKD04N60RF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Integrated Circuits (ICs) - Transistors - IGBTs - IKD04N60RF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
The RC-Drives 600 V, 4 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. Summary of Features Optimized parameters for up to 20% lower switching losses Operating range of DC to 30 kHz Max junction temperature 175°C Short circuit capability of 5µs Very tight parameter distribution Best in class current versus package size performance Smooth switching performance leading to low EMI levels Benefits Excellent cost/performance for hard switching applications Outstanding temperature stability Very good EMI behavior Up to 60% space saving on the PCB Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching Potential Applications Washing machines General purpose inverters Aircon compressors Hard switching topologies up to 1.0 kW
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IKD04N60RF - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IKD04N60RF
IGBT Discretes IKD04N60RF
The RC-Drives 600 V, 4 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. Summary of Features Optimized parameters for up to 20% lower switching losses Operating range of DC to 30 kHz Max junction temperature 175°C Short circuit capability of 5µs Very tight parameter distribution Best in class current versus package size performance Smooth switching performance leading to low EMI levels Benefits Excellent cost/performance for hard switching applications Outstanding temperature stability Very good EMI behavior Up to 60% space saving on the PCB Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching Potential Applications Washing machines General purpose inverters Aircon compressors Hard switching topologies up to 1.0 kW

The RC-Drives 600 V, 4 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives.


Summary of Features

  • Optimized parameters for up to 20% lower switching losses
  • Operating range of DC to 30 kHz
  • Max junction temperature 175°C
  • Short circuit capability of 5µs
  • Very tight parameter distribution
  • Best in class current versus package size performance
  • Smooth switching performance leading to low EMI levels

Benefits

  • Excellent cost/performance for hard switching applications
  • Outstanding temperature stability
  • Very good EMI behavior
  • Up to 60% space saving on the PCB
  • Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching

Potential Applications

  • Washing machines
  • General purpose inverters
  • Aircon compressors
  • Hard switching topologies up to 1.0 kW
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
600V 8A 75W TO252 IGBT Transistor
279-IKD04N60RF
600V 8A 75W TO252 IGBT Transistor 279-IKD04N60RF
IGBT 600V 8A 75W TO252-3 Product overview: IKD04N60RF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 8A, 75W, TO252. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 8A, 75W, TO252. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKD04N60RF can be used for catalog matching and distributor lookup.

IGBT 600V 8A 75W TO252-3 Product overview: IKD04N60RF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 8A, 75W, TO252. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 8A, 75W, TO252. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKD04N60RF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - IKD04N60RFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
IKD04N60RFTR-ND
Single IGBTs IKD04N60RFTR-ND
IGBT Trench 600V 8A 75W Surface Mount PG-TO252-3

IGBT Trench 600V 8A 75W Surface Mount PG-TO252-3

Buy Now Datasheet
Single IGBTs - IKD04N60RF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IKD04N60RF
Single IGBTs IKD04N60RF
IGBT 600V 8A 75W TO252-3

IGBT 600V 8A 75W TO252-3

Supplier's Site Datasheet
Integrated Circuits (ICs) - Transistors - IGBTs - IKD04N60RF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - IGBTs
IKD04N60RF
Integrated Circuits (ICs) - Transistors - IGBTs IKD04N60RF
Integrated Circuits (ICs) - Transistors - IGBTs

Integrated Circuits (ICs) - Transistors - IGBTs

Supplier's Site

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IKD04N60RF 279-IKD04N60RF IKD04N60RFTR-ND IKD04N60RF IKD04N60RF
Product Name IGBT Discretes 600V 8A 75W TO252 IGBT Transistor Single IGBTs Single IGBTs Integrated Circuits (ICs) - Transistors - IGBTs
VCE(on) 600 volts
Switching Speed 4 to 30 kHz
tr 7 ns
tf 37 ns
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